This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1821
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Package
Code
SMini3-G1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Junction temperature
Storage temperature
Collector power dissipation
T
stg
–55 to +150
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
tin
V
CEO
I
CBO
h
FE
f
T
C
ob
NV
ue
di
Symbol
V
EBO
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Rating
150
5
150
50
Unit
V
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
Name
Pin
1. Base
2. Emitter
3. Collector
mA
mA
°C
°C
100
150
150
mW
Conditions
Min
150
5
I
C
= 100
mA,
I
B
= 0
I
E
= 10
mA,
I
C
= 0
Marking Symbol: P
Typ
Max
Unit
V
V
mA
V
MHz
pF
mV
isc
on
/D
Collector-base cutoff current (Emitter open)
V
CB
= 100 V, I
E
= 0
1
Transition frequency
Ma
int
en
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Noise voltage
an
ce
Forward current transfer ratio
*
V
CE
= 5 V, I
C
= 10 mA
130
330
1
V
CE(sat)
I
C
= 30 mA, I
B
= 3 mA
V
CB
= 10 V, I
E
= –10 mA, f = 200 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
150
2.3
V
CB
= 10 V, I
C
= 1 mA, G
V
= 80 dB,
R
g
= 100 kΩ, Function = FLAT
Pl
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
130 to 220
S
185 to 330
Publication date : October 2008
SJC00228DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1821
P
C
T
a
240
120
100
I
C
V
CE
T
a
=
25°C
I
B
=
2.0 mA
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
40
20
0
0.2 mA
120
100
I
C
V
BE
V
CE
=
10 V
25°C
T
a
=
75°C
−25°C
Collector power dissipation P
C
(mW)
200
Collector current I
C
(mA)
Collector current I
C
(mA)
160
120
80
40
0
80
60
80
60
40
20
M
ain
Di
sc te
on na
tin nc
ue e/
d
0
40
80
120
160
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
600
500
400
300
200
100
10
1
25°C
T
a
=
75°C
0.1
−25°C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
3
Ma
int
en
4
an
ce
/D
5
I
E
=
0
f
=
1 MHz
T
a
=
25°C
isc
C
ob
V
CB
on
tin
2
1
0
1
10
100
Collector-base voltage V
CB
(V)
2
Pl
ue
Collector current I
C
(mA)
di
0.01
0.1
1
10
100
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp
Transition frequency f (MHz)
t
c
e ped
life
an ut
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
h
FE
I
C
f
T
I
E
V
CE
=
10 V
200
160
T
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CB
=
10 V
T
a
=
25°C
Forward current transfer ratio h
FE
120
T
a
=
75°C
25°C
−25°C
80
40
0
0.1
1
10
100
0
−1
−10
−100
Collector current I
C
(mA)
Emitter currentI
E
(mA)
SJC00228DED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20080805
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
t in
ic.
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue