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2SD1821A-R

产品描述Small Signal Bipolar Transistor, 0.05A I(C), 185V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-G1, 3 PIN
产品类别分立半导体    晶体管   
文件大小446KB,共4页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
标准
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2SD1821A-R概述

Small Signal Bipolar Transistor, 0.05A I(C), 185V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-G1, 3 PIN

2SD1821A-R规格参数

参数名称属性值
是否Rohs认证符合
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性LOW NOISE
最大集电极电流 (IC)0.05 A
集电极-发射极最大电压185 V
配置SINGLE
最小直流电流增益 (hFE)130
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)0.15 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)150 MHz
Base Number Matches1

文档预览

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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1821
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Package
Code
SMini3-G1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Junction temperature
Storage temperature
Collector power dissipation
T
stg
–55 to +150
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
tin
V
CEO
I
CBO
h
FE
f
T
C
ob
NV
ue
di
Symbol
V
EBO
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life
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d
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cy
on es
cle
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/ ion
.
Rating
150
5
150
50
Unit
V
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
Name
Pin
1. Base
2. Emitter
3. Collector
mA
mA
°C
°C
100
150
150
mW
Conditions
Min
150
5
I
C
= 100
mA,
I
B
= 0
I
E
= 10
mA,
I
C
= 0
Marking Symbol: P
Typ
Max
Unit
V
V
mA
V
MHz
pF
mV
isc
on
/D
Collector-base cutoff current (Emitter open)
V
CB
= 100 V, I
E
= 0
1
Transition frequency
Ma
int
en
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Noise voltage
an
ce
Forward current transfer ratio
*
V
CE
= 5 V, I
C
= 10 mA
130
330
1
V
CE(sat)
I
C
= 30 mA, I
B
= 3 mA
V
CB
= 10 V, I
E
= –10 mA, f = 200 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
150
2.3
V
CB
= 10 V, I
C
= 1 mA, G
V
= 80 dB,
R
g
= 100 kΩ, Function = FLAT
Pl
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
130 to 220
S
185 to 330
Publication date : October 2008
SJC00228DED
1

2SD1821A-R相似产品对比

2SD1821A-R 2SD1821A-S 2SD18210RL
描述 Small Signal Bipolar Transistor, 0.05A I(C), 185V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-G1, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 185V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-G1, 3 PIN TRANS NPN 150V 0.05A SMINI-3
是否Rohs认证 符合 符合 -
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
针数 3 3 -
Reach Compliance Code unknow unknow -
ECCN代码 EAR99 EAR99 -
其他特性 LOW NOISE LOW NOISE -
最大集电极电流 (IC) 0.05 A 0.05 A -
集电极-发射极最大电压 185 V 185 V -
配置 SINGLE SINGLE -
最小直流电流增益 (hFE) 130 185 -
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 -
元件数量 1 1 -
端子数量 3 3 -
最高工作温度 150 °C 150 °C -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE SMALL OUTLINE -
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED -
极性/信道类型 NPN NPN -
最大功率耗散 (Abs) 0.15 W 0.15 W -
认证状态 Not Qualified Not Qualified -
表面贴装 YES YES -
端子形式 GULL WING GULL WING -
端子位置 DUAL DUAL -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED -
晶体管应用 AMPLIFIER AMPLIFIER -
晶体管元件材料 SILICON SILICON -
标称过渡频率 (fT) 150 MHz 150 MHz -
Base Number Matches 1 1 -

 
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