PTFB182503EL
PTFB182503FL
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1805 – 1880 MHz
Description
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input
and output matching, high gain, wide signal bandwidth and reduced
memory effects for improved DPD correctability. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFB182503EL
H-33288-6
PTFB182503FL
H-34288-4/2
Features
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1842 MHz, 3GPP
WCDMA signal, PAR = 7.5 dB,
10 MHz carrier spacing
-30
35
30
Two-carrier WCDMA Drive-up
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance,
1880 MHz, 30 V
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1880 MHz, 30 V
- Output power at P
1dB
= 240 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking amplifiers
• Integrated ESD protection. Human Body Model,
Class 2 (minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
• Pb-free, RoHS compliant
IM3 (dBc), ACPR (dBc)
-35
Efficiency
-40
-45
-50
-55
38
40
42
44
46
48
50
25
20
IM3
ACPR
15
10
5
Average Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 50 W average
ƒ
1
= 1840 MHz, ƒ
2
= 1845 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Drain Efficiency (%)
Symbol
G
ps
Min
18
27
—
Typ
19
28
–35
Max
—
—
–31
Unit
dB
%
dBc
h
D
IMD
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
RF Characteristics
(cont.)
Two-tone Specifications
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 220 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
18
40
–28
Max
—
—
—
Unit
dB
%
dBc
h
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.85 A
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.03
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 50 W WCDMA)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
qJC
Value
65
–6 to +10
24 to 30
200
–40 to +150
0.262
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB182503EL V1 R0
PTFB182503EL V1 R250
PTFB182503FL V2 R0
PTFB182503FL V2 R250
Order Code
PTFB182503ELV1R0XTMA1
PTFB182503ELV1R250XTMA1
PTFB182503FLV2R0XTMA1
PTFB182503FLV2R250XTMA1
Package Description
H-33288-6, slotted flange
H-33288-6, slotted flange
H-34288-4/2, earless flange
H-34288-4/2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Typical Performance
(data taken in a production test fixture)
Two-Carrier WCDMA at Various Biases
V
DD
= 30 V, ƒ = 1842 MHz, 3GPP WCDMA
signal, PAR = 7.5 dB, 5 MHz carrier spacing
V
DD
= 30V, I
DQ
=1.85 A ƒ = 1842 MHz,
PAR = 7.1 dB
-5
45
IM3 Up
IM3 Low
Efficiency
Efficiency
40
35
30
25
20
15
10
5
37
39
41
43
45
47
49
51
Six-Carrier GSM vs Power Out
-30
3rd Order IMD (dBc)
-35
-40
-45
-50
-55
38
40
I
DQ
= 1.65 A
I
DQ
= 1.45 A
I
DQ
= 2.25 A
-10
-15
IMD (dBc)
I
DQ
= 2.05 A
I
DQ
= 1.85 A
-20
-25
-30
-35
-40
-45
42
44
46
48
50
Average Output Power (dBm)
Output Power (dBm)
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1842 MHz
V
DD
= 30 V, ƒ = 1842 MHz
Power Sweep
20
19
70
20.0
19.5
17
16
15
14
13
35
40
45
50
55
40
30
20
Power Gain (dB)
Gain (dB)
18
50
Drain Efficiency (%)
Gain
60
19.0
18.5
18.0
17.5
17.0
36
38
40
42
44
46
1.45 A
1.65 A
1.85 A
2.05 A
2.25 A
48
50
52
54
Efficiency
10
0
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 12
Rev. 07.2, 2016-06-10
PTFB182503EL
PTFB182503FL
Typical Performance
(cont.)
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 1842 MHz
Power Sweep, CW Conditions
I
DQ
= 1850 mA, ƒ = 1842 MHz, tone spacing =
1 MHz, Output Power (PEP) = 53 dBm
65
-10
50
Voltage Sweep
19
18
55
45
Efficiency
17
16
15
14
0
40
80
120
160
200
3rd Order IMD (dBc)
Drain Efficiency (%)
-20
40
Efficiency
-30
35
25
IM3 Up
30
Gain (dB), Drain Efficiency (%)
Gain
Gain (dB)
-40
20
T
CA S E
= 25°C
T
CA S E
= 90°C
Gain
23
25
27
29
31
33
0.
-50
15
gb182503eflV1 July 29, 2009 6:57:48 PM
240
Output Power (W)
Nornalized to 50 Ohms
0.
0
D
R
--
->
Z Source
Z Load
G
S
-
W
AV
E
LE
NGT
H
S T
OW
A
RD
G
E
NE
RA
T
O
0.0
0.1
0.2
0.3
0.4
MHz
1780
1800
1820
1840
1860
1880
1900
1920
Data Sheet
R
2.99
2.95
2.89
2.84
2.80
2.78
2.74
2.72
jX
–2.48
–2.30
–2.13
–1.96
–1.76
–1.58
–1.39
–1.21
R
1.33
1.33
1.31
1.29
1.29
1.28
1.29
1.29
jX
–0.49
–0.38
–0.27
–0.16
–0.02
0.10
0.23
0.36
4 of 12
D
LOA
D
-
S
T
OW
AR
NGT
H
VE
LE
1780 MHz
0. 1
Z Source
W
<---
A
0.
2
0. 3
Rev. 07.2, 2016-06-10
0.
45
0.
05
0.
4
0.5
Frequency
Z Source
W
Z Load
W
Z Load
1920 MHz
0.
3
Broadband Circuit Impedance
0.
45
0.
5
4
b182503-v1efl-v1
Supply Voltage (V)
5
10
Z
0
= 50
W
0. 2
0. 6
0. 7
0 .1
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