Ordering number : ENN1027A
2SB920 / 2SD1236
PNP / NPN Epitaxial Planar Silicon Transistors
2SB920 / 2SD1236
Large Current Switching Applications
Applications
•
Package Dimensions
unit : mm
2010C
[2SB920 / 2SD1236]
3.6
10.2
5.1
2.7
6.3
Large current switching of relay drivers, high-speed
inverters, converters.
Features
•
4.5
18.0
5.6
1.2
14.0
0.8
1 2 3
15.1
•
Low collector-to-emitter saturation voltage :
VCE(sat)=-
-0.5V (PNP), 0.4V (NPN) max.
Large current capacity.
1.3
0.4
Specifications
( ) : 2SB920
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
2.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
2.55
2.55
Ratings
(--)120
(--)80
(--)6
(--)5
(--)9
1.75
30
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)80V, IE=0
VEB=(--)4V, IC=0
Ratings
min
typ
max
(--)0.1
(--)0.1
Unit
mA
mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502 TS IM 8-4532 No.1027-1/4
2SB920 / 2SD1236
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
hFE1*
hFE2
fT
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCE=(--)2V, IC=(-
-)1A
VCE=(--)2V, IC=(-
-)3A
VCE=(--)5V, IC=(-
-)1A
IC=(--)3A, IB=(--)0.3A
IC=(--)1mA, IE=0
IC=(--)1mA, RBE=∞
IE=(-
-)1mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
(--)120
(--)80
(--)6
(0.2)0.1
(0.7)1.2
(0.2)0.4
Ratings
min
70*
30
20
(--0.5)0.4
MHz
V
V
V
V
μs
μs
μs
typ
max
280*
Unit
*The 2SB920 / 2SD1236 are graded as follows by hFE at 1A :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Swicthing Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
RB=1
Ω
VR=10
Ω
50
Ω
+
100μF
VBE= --5V
+
470μF
VCC=50V
RL=25
Ω
IC=10IB1= --10IB2=2A
For PNP, the polarity is reversed.
--5.0
--4.5
IC -- VCE
2SB920
From top
--200mA
--180mA
--160mA
--140mA
--120mA
Collector Current, IC -- A
Collector Current, IC -- A
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
200m
A
mA
--100
A
--80m
--60mA
--40mA
5.0
4.5
4.0
IC -- VCE
2SD1236
6
A
1
0m
18
0m
A
140
mA 20mA
100mA
1
80mA
60mA
40mA
--20mA
20mA
IB=0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IB=0
1.8
2.0
Collector-to-Emitter Voltage, VCE -- V
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
IT04407
10
9
8
7
6
5
4
3
2
1
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IT04408
IC -- VCE
2SB920
Collector Current, IC -- A
1A
mA
--300
A
--200m
--100mA
Collector Current, IC -- A
--50
0mA
mA
--70
--600
mA 0mA
900 --80
--
0mA
400mA
--
2SD1236
1A
mA
900
800mA
700mA
600mA
mA
500
400mA
300mA
200mA
100mA
IB=0
--1.8
--2.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IB=0
1.8
2.0
Collector-to-Emitter Voltage, VCE -- V
IT04409
Collector-to-Emitter Voltage, VCE -- V
IT04410
No.1027-2/4
2SB920 / 2SD1236
--12
IC -- VBE
2SB920
VCE= --2V
12
IC -- VBE
2SD1236
VCE=2V
--10
10
Collector Current, IC -- A
--8
Collector Current, IC -- A
8
--6
6
Ta=
120
°
C
25
°
C
--4
4
--2
2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT04412
Base-to-Emitter Voltage, VBE -- V
1000
5
3
2
IT04411
1000
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
Ta=
1
20
°
C
25
°
C
--40
°
C
--40
°
C
Ta=120°C
25°C
2SB920
VCE= --2V
5
3
2
Ta=120
°C
25
°C
2SD1236
VCE=2V
DC Current Gain, hFE
DC Current Gain, hFE
100
5
3
2
10
5
3
2
1.0
--0.01
2
3
5
--40°C
100
5
3
2
10
5
3
2
--40
°C
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC -- A
--10
5
2
--10
IT04413
1.0
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC -- A
10
2
10
IT04414
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SB920
IC / IB=10
VCE(sat) -- IC
2SD1236
IC / IB=10
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
2
1.0
5
--1.0
5
2
--0.1
5
C
25
°
Ta
°
C
120
=
2
0.1
5
°
C
--40
C
25
°
0
°
C
=12
Ta
°
C
--40
2
--0.01
--0.01
2
3
5
2
3
5
2
3
5
2
--10
IT04415
2
0.01
0.01
2
3
5
2
3
5
2
3
5
2
10
IT04416
--0.1
--1.0
0.1
1.0
Collector Current, IC -- A
5
3
2
Collector Current, IC -- A
5
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SB920
IC / IB=10
VBE(sat) -- IC
2SD1236
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
--1.0
25
°C
Ta= --40
°C
1.0
25
°C
Ta= --40°C
120
°
C
5
3
2
5
3
2
120
°
C
--0.1
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC -- A
--10 2
IT04417
0.1
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC -- A
2
10
IT04418
No.1027-3/4
2SB920 / 2SD1236
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
--1.0
ASO
ICP= --9A
IC= --5A
DC
op
era
2SB920
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
ASO
ICP=9A
IC=5A
DC
op
era
2SD1236
Collector Current, IC -- A
Collector Current, IC -- A
s
1m
1m
tio
n
tio
10
10
ms
n
s
ms
10
0m
s
10
0m
s
1ms to 10ms : Single pulse
2
3
5
7
--10
2
3
5
Collector-to-Emitter Voltage, VCE -- V
2.0
1.75
--100
IT04419
7
3
1.0
1ms to 10ms : Single pulse
2
3
5
7
10
2
3
5
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
35
100
IT04420
7
PC -- Tc
2SB920 / 2SD1236
2SB920 / 2SD1236
30
Collector Dissipation, PC -- W
1.5
Collector Dissipation, PC -- W
25
No
1.0
he
ats
20
in
k
15
0.5
10
5
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT04479
Case Temperature, Tc --
°C
IT05325
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2002. Specifications and information herein are subject
to change without notice.
PS No.1027-4/4
嵌入式系统
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