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2SB829R

产品描述TRANSISTOR 15 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN, BIP General Purpose Power
产品类别分立半导体    晶体管   
文件大小118KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
下载文档 详细参数 选型对比 全文预览

2SB829R概述

TRANSISTOR 15 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN, BIP General Purpose Power

2SB829R规格参数

参数名称属性值
是否Rohs认证符合
Objectid1383293898
零件包装代码TO-218
包装说明FLANGE MOUNT, R-PSFM-T3
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
YTEOL0
最大集电极电流 (IC)15 A
集电极-发射极最大电压50 V
配置SINGLE
最小直流电流增益 (hFE)100
JEDEC-95代码TO-218
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型PNP
认证状态Not Qualified
表面贴装NO
端子面层Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)20 MHz

文档预览

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Ordering number:825C
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB829/2SD1065
50V/15A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Package Dimensions
unit:mm
2022A
[2SD829/2SD1065]
Features
· Low-saturation collector-to-emitter voltage :
V
CE(sat)
=–0.5V max.
· Wide ASO leading to high resistance to breakdown.
( ) : 2SB829
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)60
(–)50
(–)6
(–)15
(–)20
Unit
V
V
V
A
A
W
˚C
Tc=25˚C
90
150
–55 to +150
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)8A
VCE=(–)5V, IC=(–)1A
IC=(–)8A, IB=(–)0.4A
70*
30
20
(–0.26)
0.18
(–0.5)
0.4
MHz
V
V
Conditions
Ratings
min
ty p
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB829/2SD1065 are classified by 1A h
FE
as follows :
70
Q
140
100
R
200
140
S
280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/10996TS (KOTO) 8-3880/4017KI/3145KI No.825–1/4

2SB829R相似产品对比

2SB829R 2SD1065R
描述 TRANSISTOR 15 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN, BIP General Purpose Power 15A, 50V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN
是否Rohs认证 符合 符合
零件包装代码 TO-218 TO-218
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 2 2
Reach Compliance Code compliant unknow
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 15 A 15 A
集电极-发射极最大电压 50 V 50 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 100 100
JEDEC-95代码 TO-218 TO-218
JESD-30 代码 R-PSFM-T3 R-PSFM-T3
元件数量 1 1
端子数量 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
极性/信道类型 PNP NPN
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子面层 Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 20 MHz 20 MHz

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