Ordering number:ENN825C
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB829/2SD1065
50V/15A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Package Dimensions
unit:mm
2022A
[2SD829/2SD1065]
15.6
14.0
2.6
3.2
3.5
4.8
Features
· Low-saturation collector-to-emitter voltage :
V
CE(sat)
=–0.5V max.
· Wide ASO leading to high resistance to breakdown.
2.0
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
1.3
1.2
15.0
20.0
( ) : 2SB829
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
1.4
Ratings
(–)60
(–)50
(–)6
(–)15
(–)20
Unit
V
V
V
A
A
W
˚C
Tc=25˚C
90
150
–55 to +150
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)8A
VCE=(–)5V, IC=(–)1A
IC=(–)8A, IB=(–)0.4A
70*
30
20
(–0.26)
0.18
(–0.5)
0.4
MHz
V
V
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB829/2SD1065 are classified by 1A h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/91098HA (KT)/10996TS (KOTO) 8-3880/4017KI/3145KI No.825–1/4
2SB829/2SD1065
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Symbol
V(BR)CBO IC=(–)1mA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tf
tstg
IE=(–)1mA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Conditions
Ratings
min
(–)60
(–)50
(–)6
0.2
(0.5)
1.0
0.1
typ
max
Unit
V
V
V
µs
µs
µs
µs
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
RB
1Ω
VR
100Ω
50Ω
RL
10Ω
+
470µF
VCC=20V
+
100µF
VBE= --5V
IC=10IB1= --10IB2=2A
(For PNP, the porarity is reversed.)
--20
--18
--16
IC -- VCE
--1A
A
--600m
2SB829
--200mA
--100mA
20
18
16
14
12
10
8
6
4
2
IC -- VCE
2SD1065
1A
A
600m
200mA
80mA
60mA
40mA
Collector Current, IC – A
--14
--12
--80mA
--60mA
--10
--40mA
--8
--6
--4
--2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Collector Current, IC – A
--20mA
20mA
IB=0
--1.8
--2.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IB=0
1.8
2.0
Collector-to-Emitter Voltage, VCE – V
--20
ITR08495
20
Collector-to-Emitter Voltage, VCE – V
ITR08496
IC -- VBE(on)
2SB829
VCE= --2V
IC -- VBE(on)
2SD1065
VCE=2V
Collector Current, IC – A
--16
16
--12
Collector Current, IC – A
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
12
--8
8
--4
4
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE(on) – V
ITR08497
Base-to-Emitter Voltage, VBE(on) – V
ITR08498
No.825–2/4
2SB829/2SD1065
1000
7
5
hFE -- IC
2SB829
VCE= --2V
1000
7
5
hFE -- IC
2SD1065
VCE=2V
DC Current Gain, hFE
3
2
DC Current Gain, hFE
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2 3
ITR08499
3
2
100
7
5
3
2
100
7
5
3
2
10
10
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC – A
3
2
Collector Current, IC – A
10
5 7 10
2 3
ITR08500
VCE(sat) -- IC
2SB829
VCE(sat) -- IC
2SD1065
5
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
--10
5
3
2
--1.0
5
3
2
--0.1
5
3
2
--0.01
--0.01 2
3
5
--0.1
2
3
5
3
2
1.0
5
3
2
0.1
5
3
2
3
5
2
3
=20
/ IB
IC
=10
/ IB
IC
2
3
5
2
3
5
IC
=2
/ IB
IC
0
0
=1
/ IB
2
Collector Current, IC – A
--1.0
--10
0.01
0.01 2
0.1
5
ITR08501
100
Collector Current, IC – A
1.0
3
5
10
2
3
5
ITR08502
--100
7
5
VBE(sat) -- IC
2SB829
VBE(sat) -- IC
2SD1065
7
5
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
3
2
--10
7
5
3
2
--1.0
7
5
3
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
3
2
10
7
5
3
2
1.0
7
5
3
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2 3
A
ITR08504
IC / IB=10, 20
IC / IB=10, 20
Collector Current, IC – A
5
3
2
5 7 --10
2 3
ITR08503
5
3
2
Collector Current, IC –
ASO
2SB829
ICP=–20A
IC=–15A
ASO
2SD1065
ICP=20A
IC=15A
10
ms
Collector Current, IC – A
--10
7
5
Collector Current, IC – A
10
7
5
3
2
1.0
7
5
3
2
0.1
1m
s
1m
s
ms
10
DC
DC
3
2
--1.0
7
5
3
2
--0.1
5
7 --1.0
2
3
5
7
10
op
t
era
ion
--10
2
op
0m
Collector-to-Emitter Voltage, VCE – V
s
0m
10
3
5
7 --100
ITR08505
n
tio
era
s
5
7
1.0
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE – V
7 100
ITR08506
No.825–3/4
2SB829/2SD1065
100
90
PC -- Tc
2SB829 / 2SD1065
Collector Dissipation, P
C
– W
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – ˚C
ITR08507
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.825–4/4
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