Ordering number:ENN1572C
NPN Triple Diffused Planar Silicon Transistor
2SC3449
500V/7A Switching Regulator Applications
Features
· High breakdown voltage and high reliability.
· High-speed switching (t
f
: 0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2022A
[2SC3449]
2.6
3.5
15.6
14.0
3.2
4.8
2.0
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
1.3
1.2
15.0
20.0
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300µs, Duty Cycle≤10%
Tc=25˚C
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Conditions
1.4
Ratings
800
500
7
7
14
3
80
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=500V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.6A
VCE=5V, IC=3A
15*
8
Conditions
Ratings
min
typ
max
10
10
50*
Unit
µA
µA
Continued on next page.
* : The h
FE
1 of the 2SC3449 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
Rank
hFE
L
15 to 30
M
20 to 40
N
30 to 50
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60104TN (PC)/N1098HA (KT)/6200MO/4217KI/3085KI/6154KI, MT No.1572–1/4
2SC3449
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
Cob
VCE(sat)
VBE(sat)
VCE=10V, IC=0.6A
VCB=10V, f=1MHz
IC=3A, IB=0.6A
IC=3A, IB=0.6A
800
500
7
500
0.5
3.0
0.3
Conditions
Ratings
min
typ
18
80
1.0
1.5
max
Unit
MHz
pF
V
V
V
V
V
V
µs
µs
µs
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=5mA, RBE=∞
V(BR)EBO IE=1mA, IC=0
VCEX(sus) IC=2.5A, IB1=–IB2=1A, L=1mH, clamped
ton
VCC=200V, 5IB1=–2.5IB2=IC=4A, RL=50
Ω
tstg
tf
VCC=200V, 5IB1=–2.5IB2=IC=4A, RL=50
Ω
VCC=200V, 5IB1=–2.5IB2=IC=4A, RL=50
Ω
Switching Time Test Circuit
PW=20µs
Duty≤1%
INPUT
VR
50Ω
+
100µF
VBE=--5V
+
470µF
VCC=200V
IB1
RB
IB2
OUTPUT
RL
50Ω
8
7
IC -- VCE
1.2A
1.0A
800mA
600mA
2
hFE -- IC
VCE=5V
100
7
Collector Current, IC – A
DC Current Gain, hFE
6
5
4
3
2
1
0
0
1
2
3
4
5
3
2
Ta=120
°C
400mA
25
°C
--40
°
C
200mA
100mA
50mA
20mA
10
7
5
IB=0
5
6
7
8
9
10
3
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector-to-Emitter Voltage, VCE – V
10
7
5
3
ITR05531
10
7
Collector Current, IC – A
7 10
ITR05532
5
VCE(sat) -- IC
IC / IB=5
VBE(sat) -- IC
IC / IB=5
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
40
°
C
Ta=
--
1.0
7
5
3
2
0.1
7
5
3
2
3
5
7 0.1
2
3
5
7 1.0
2
25
°
C
120
°
C
2
1.0
7
5
3
2
Ta=--40
°C
25
°C
120
°
C
3
Collector Current, IC – A
7 10
ITR05533
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC – A
7 10
ITR05534
5
No.1572–2/4
2SC3449
8
7
IC -- VBE
VCE=5V
Switching Time, SW time –
µs
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
SW Time -- IC
tstg
Collector Current, IC – A
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR05535
Ta=
120
°
C
25
°
C
--40
°
C
tf
Base-to-Emitter Voltage, VBE – V
2
10
7
5
3
2
3
0.1
2
3
5
7
1.0
2
3
to
n
5
Collector Current, IC – A
2
10
10
ITR05536
7
Forward Bias A S O
<50µs
Reverse Bias A S O
IC=7A
Collector Current, IC – A
Collector Current, IC – A
80
P
W
C
s
1m
7
5
3
2
1.0
7
5
3
2
0.1
0
µ
10
s
Test Circuit
IB1
IB2
IC
10
TUT
L
DC
1.0
7
5
3
2
0.1
7
5
3
ms
on
e
op
i
rat
--5V
VCC=20V
Tc=25°C
Single pulse
5
7
10
2
3
5
7
100
2
3
5
Collector-to-Emitter Voltage, VCE – V
Transient Thermal Resistance, Rth(t) –
°C
/ W
2
7 1000
ITR05537
7
5
10
IB2=--1A
L=200µH
Tc=25°C
2
3
5
7
100
2
3
5
Collector-to-Emitter Voltage, VCE – V
100
1000
ITR05538
7
Rth(t) -- t
Tc=25°C
Collector Dissipation, P
C
– W
PC -- Ta
1.0
7
5
3
2
80
60
40
0.1
7
5
3
2
0.1
20
0
2 3
5 7 1.0
2 3
Time, t – ms
5 7 10
2 3
5 7 100
2 3
5 71000
ITR05539
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR05540
No.1572–3/4
2SC3449
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2004. Specifications and information herein are subject to
change without notice.
PS No.1572–4/4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
