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2SB1511R

产品描述20A, 30V, PNP, Si, POWER TRANSISTOR, TO-3PML, 3 PIN
产品类别分立半导体    晶体管   
文件大小38KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
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2SB1511R概述

20A, 30V, PNP, Si, POWER TRANSISTOR, TO-3PML, 3 PIN

2SB1511R规格参数

参数名称属性值
Objectid1481156931
零件包装代码TO-3PML
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codeunknown
外壳连接ISOLATED
最大集电极电流 (IC)20 A
集电极-发射极最大电压30 V
配置SINGLE
最小直流电流增益 (hFE)100
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型PNP
功耗环境最大值40 W
最大功率耗散 (Abs)40 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)120 MHz
VCEsat-Max0.5 V

文档预览

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Ordering number:ENN3716
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1511/2SD2285
30V/20A High-Current Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Package Dimensions
unit:mm
2039D
[2SB1511/2SD2285]
3.4
16.0
5.6
3.1
Features
· Low collector-to-emitter saturation voltage :
V
CE(sat)
=–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
· Micaless package facilitating easy mounting.
5.0
8.0
21.0
22.0
20.4
2.8
2.0
1.0
4.0
2.0
0.6
1
2
3
( ) : 2SB1511
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Conditions
3.5
Ratings
(–)60
(–)30
(–)6
(–)20
(–)40
3.0
40
150
–55 to +150
2.0
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)10A
IC=(–)8A, IB=(–)0.4A
70*
30
(–0.25)
0.2
(–0.5)
0.4
V
V
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB1511/2SD2285 are classified by 1A h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51304TN (PC)/N1098HA (KT)/5111MH, JK (KOTO) No.3716–1/4

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