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2SC3448-N

产品描述Power Bipolar Transistor, 4A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
产品类别分立半导体    晶体管   
文件大小36KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
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2SC3448-N概述

Power Bipolar Transistor, 4A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN

2SC3448-N规格参数

参数名称属性值
零件包装代码TO-3PB
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codeunknow
其他特性HIGH RELIABILITY
最大集电极电流 (IC)4 A
集电极-发射极最大电压500 V
配置SINGLE
最小直流电流增益 (hFE)30
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型NPN
最大功率耗散 (Abs)60 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)18 MHz
Base Number Matches1

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Ordering number:ENN1546B
NPN Triple Diffused Planar Silicon Transistor
2SC3448
500V/4A Switching Regulator Applications
Applications
· Switching regulator.
Package Dimensions
unit:mm
2022A
[2SC3448]
3.5
15.6
14.0
2.6
3.2
4.8
2.0
Features
· High breakdown voltage and high reliability.
· High-speed switching (t
f
: 0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
1.3
1.2
15.0
20.0
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300µs, Duty Cycle≤10%
Tc=25˚C
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Conditions
1.4
Ratings
800
500
7
4
8
1.5
60
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics
at
Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=500V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.3A
VCE=5V, IC=1.5A
15*
8
Conditions
Ratings
min
typ
max
10
10
50*
Unit
µA
µA
Continued on next page.
* : The h
FE
1 of the 2SC3448 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
Rank
hFE
L
15 to 30
M
20 to 40
N
30 to 50
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60104TN (PC)/N1098HA (KT)/4217KI/3085KI/6154KI, MT No.1546–1/4

2SC3448-N相似产品对比

2SC3448-N 2SC3448-L 2SC3448-M 2SC3448N
描述 Power Bipolar Transistor, 4A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN Power Bipolar Transistor, 4A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN Power Bipolar Transistor, 4A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN 4A, 500V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN
零件包装代码 TO-3PB TO-3PB TO-3PB TO-218
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 3 3 3 2
Reach Compliance Code unknow unknow unknow unknown
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
最大集电极电流 (IC) 4 A 4 A 4 A 4 A
集电极-发射极最大电压 500 V 500 V 500 V 500 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 30 15 20 30
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN NPN NPN NPN
最大功率耗散 (Abs) 60 W 60 W 60 W 60 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 18 MHz 18 MHz 18 MHz 18 MHz
Base Number Matches 1 1 1 -
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