UTC 2SD1816
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG
APPLICATIONS
FEATURES
*Low collector-to-emitter saturation voltage
*Good linearity of hFE
*Small and slim package facilitating compactness of sets .
*High f
T
*Fast switching speed
1
APPLICATION
*Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
TO-252
1: BASE
2: COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
PULSE(Note 1)
Collector Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Pc
VALUE
120
100
6
4
8
1
(T
C
=25°C) 20 (Note 2)
150
-55 ~ +150
UNIT
V
V
V
A
A
W
W
°C
°C
Junction Temperature
T
J
Storage Temperature
T
STG
Note1: Duty=1/2,Pw=20ms
Note2: When mounted on a 40*40*0.7 mm ceramic board
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
TEST CONDITIONS
Ic=10μA,I
E
=0
Ic=1mA,R
B
=∞
I
E
=10μA,I
C
=0
V
CB
= 100 V,I
E
=0
V
EB
= 4 V,I
C
=0
V
CE
= 5 V,Ic= 0.5 A
V
CE
=5 V,Ic= 3 A
Ic= 2 A, I
B
=0.2 A
Ic= 2 A, I
B
= 0.2A
MIN
120
100
6
TYP
MAX
UNIT
V
V
V
μA
μA
70
40
150
0.9
1
1
400
400
1.2
mV
V
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R209-011,A
UTC 2SD1816
PARAMETER
Transition Frequency
Output Capacitance
Turn-on Time
Storage Time
Fall Time
NPN EPITAXIAL PLANAR TRANSISTOR
SYMBOL
f
T
Cob
ton
tstg
tf
TEST CONDITIONS
V
CE
= 10V, I
C
= 0.5A
V
CB
=10 V, I
E
= 0 A,f=1MHz
See test circuit
See test circuit
See test circuit
MIN
TYP
180
40
100
900
50
MAX
UNIT
MHz
pF
ns
ns
ns
CLASSIFICATION of hFE1
RANK
RANGE
R
100-200
S
140-280
T
200-400
Q
70-140
TEST CIRCUIT
PW=20μS
Duty Cycle≒1%
INPUT
I
B
1
R
B
I
B
2
50
V
R
+
100μ
-5V
Ic=10 I
B
1=-10 I
B
2=2A
Unit(resistance:Ω,capacitance:F)
+
470μ
50V
OUTPUT
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R209-011,A
UTC 2SD1816
Ic -V
CE
80mA
70mA
60mA
100mA
90mA
A
50m A
40m A
30m
A
20m
NPN EPITAXIAL PLANAR TRANSISTOR
Ic -V
CE
8mA
7mA
6mA
5mA
4mA
5
2.0
Colletcor Current,Ic -A
Colletcor Current,Ic -A
4
1.6
3
1.2
2
10mA
0.8
3mA
2mA
5mA
1
0
0
2mA
1
2
I
B
=0
3
4
5
0.4
0
1mA
I
B
=0
30
0
10
20
40
50
Collector to Emitter Voltage,V
CE
- V
Collector to Emitter Voltage,V
CE
- V
Ic -V
BE
5
V
CE
=5V
DC Current Gain,h
FE
1000
7
5
3
2
100
7
5
3
2
10
7
5
25℃
hFE- Ic
V
CE
=5V
Ta=75℃
Colletcor Current,Ic -A
4
3
25
℃
-25
℃
-25℃
2
1
0
0
Ta=
75
℃
0.2
0.4
0.6
0.8
1.0
1.2
5 0.01 2 3
5 0.1
2 3
5 1.0
2 3
5
10
Base to Emitter Voltage,V
BE
- V
Collector Current, I
C
- A
5
Gain-Bandwidth Product,fT -MHz
3
2
f
T
-I c
V
CE
=10V
Output Capacitance,Cob-pF
3
2
Cob -Vc
B
f=1MHZ
100
7
5
3
2
7
100
7
5
3
2
10
2
5
3
5 7 0.1
2
3
5 7 1.0
2
3
5
5 7 1.0
2
3
5 7 10
2
3
5 7 100
2
Colletcor Current,Ic -A
Colletcor to Base Voltage, V
CB
-V
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R209-011,A
UTC 2SD1816
V
CE(
sat) -Ic
Collector to Emitter
Saturation Voltage,V
CE
(sat) -mV
5
IC/IB=10
3
2
1000
7
5
3
2
100
7
5
3
2
5 0.01
NPN EPITAXIAL PLANAR TRANSISTOR
V
CE(
sat) -Ic
10
Base to Emitter
Saturation Voltage,V
BE
(sat) -V
7
5
3
2
IC/IB=10
1.0
7
5
3
2
5 0.01 2 3
℃
Ta=-25
25
℃
75
℃
Ta=75
℃
℃
25
2 3
5 0.1
-25
℃
2 3
5 1.0
2 3
5 10
5
0.1 2 3
5
1.0 2 3
5
10
Collector Current, I
C
- A
Collector Current, I
C
- A
10
5 Icp
3
2
1.0
5
3
2
0.1
5
3
2
0.01
5
2 3
5
1.0
2
3
Ic
ASO
Tc=25℃
one pulse
Collector Dissipation,Pc -W
s
0m
10
ms
10
Pc -Ta
25
20
1ms
D
Collector Current, I
C
- A
C
DC
O
r
pe
O
pe
ra
tio
n
(T
a=
25
℃
)
n
io
at
(T
10
2
3
15
10
)
℃
25
c=
5
100
2
5
1
00
No heat sink
20
40
60
80
100
120
140
160
5
Colletcor to Emitter Voltage,V
CE
-V
Ambient Temperature, Ta -℃
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
4
QW-R209-011,A
嵌入式系统
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