Ordering number:ENN778F
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1207/2SC2909
High-Voltage Switching
AF 60W Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of h
FE
and small C
ob
.
· Fast switching speed.
Package Dimensions
unit:mm
2003B
[2SA1207/2SC2909]
5.0
4.0
4.0
0.45
0.5
0.6
2.0
0.45
0.44
14.0
1
2
3
5.0
( ) : 2SA1207
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.3
1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Ratings
(–)180
(–)160
(–)5
(–)70
(–)140
600
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
VCB=(–)10V, f=1MHz
IC=(–)30mA, IB=(–)3mA
100*
150
(2.5)2.0
0.08
(–0.14)
0.3
(–0.4)
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
400*
MHz
pF
V
Unit
µA
µA
* : The 2SA1207/2SC2909 are classified by 10mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/4190MO/3187AT/2255MY, TS No.778-1/4
2SA1207/2SC2909
Continued from preceding page.
Parameter
Turn-ON Time
Fall Time
Storage Time
Symbol
ton
tf
tstg
Conditions
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Ratings
min
typ
0.1
0.2
1.0
max
Unit
µs
µs
µs
Switching Time Test Circuit
IN
3kΩ
IB1
IB2
50Ω
5kΩ
+
1µF
--2V
+
1µF
20V
OUT
2kΩ
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)
--60
IC -- VCE
2SA1207
.3
--0
mA
60
IC -- VCE
2SC2909
mA
.25
0
A
0.2m
Collector Current, IC – mA
--0.
--40
Collector Current, IC – mA
A
--0.2m
--0.15mA
40
0.3
30
A
25m
mA
--50
50
--30
0.15mA
0.1mA
--20
--0.1mA
20
--10
--0.05mA
10
0.05mA
0
0
IB=0
--10
--20
--30
--40
--50
--60
ITR02989
IB=0
0
0
10
20
30
40
50
60
ITR02990
Collector-to-Emitter Voltage, VCE – V
--80
--70
Collector-to-Emitter Voltage, VCE – V
80
IC -- VBE
2SA1207
VCE=--5V
Collector Current, IC – mA
IC -- VBE
2SC2909
VCE=5V
70
60
50
40
30
20
10
0
0
Collector Current, IC – mA
--60
--50
--40
--30
--20
--10
0
0
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
--
1.2
Base-to-Emitter Voltage, VBE – V
ITR02991
Ta=7
5
--25
°
C
0.2
0.4
0.6
Ta=75
°
C
25
°
C
--25
°
C
0.8
°
C
25
°
C
1.0
1.2
ITR02992
Base-to-Emitter Voltage, VBE – V
No.778-2/4
2SA1207/2SC2909
1000
7
5
3
2
hFE -- IC
2SA1207
VCE=--5V
Ta=75°C
5
3
2
hFE -- IC
Ta=75°C
25°C
2SC2909
VCE=5V
25°C
DC Current Gain, hFE
DC Current Gain, hFE
--25°C
7
5
3
2
--25°C
7
5
3
2
100
100
10
5
7
--1.0
2
3
5
7
Collector Current, IC – mA
--10
2
3
5
7 --100
ITR02993
10
5
7
1.0
2
3
5
7
Collector Current, IC – mA
10
2
3
5
100
ITR02994
7
5
fT -- IC
Gain-Bandwidth Product, fT – MHz
2SA1207
VCE=--10V
5
3
2
fT -- IC
2SC2909
VCE=10V
Gain-Bandwidth Product, fT – MHz
3
2
100
7
5
3
2
100
7
5
3
2
10
5
7 --1.0
2
3
5
7
Collector Current, IC – mA
--10
2
3
5
7 --100
ITR02995
10
5
7
1.0
2
3
5
7
Collector Current, IC – mA
10
2
3
5
100
ITR02996
7
10
7
Cob -- VCB
2SA1207
f=1MHz
10
7
Cob -- VCB
2SC2909
f=1MHz
Output Capacitance, Cob – pF
5
Output Capacitance, Cob – pF
2
3
5
7
2
3
5
7
5
3
3
2
2
1.0
7
5
1.0
7
5
--10
Collector-to-Base Voltage, VCB -- V
5
--100
ITR02997
1000
7
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
100
ITR02998
7
VCE(sat) -- IC
2SA1207
IC / IB=10
VCE(sat) -- IC
2SC2909
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
3
2
5
3
2
--1000
7
5
3
2
100
7
5
3
2
5
7
2
3
25°C
25°C
--100
7
5
3
5
7 --1.0
Ta=75
°
C
Ta=75
°
C
--25
°C
2
3
5
7 --10
2
3
5
--25
°C
Collector Current, IC – mA
7 --100
ITR02999
1.0
5
7
10
2
3
5
Collector Current, IC – mA
7 100
ITR03000
No.778-3/4
2SA1207/2SC2909
--10
7
VBE(sat) -- IC
2SA1207
IC / IB=10
10
7
VBE(sat) -- IC
2SC2909
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
25°C
--1.0
7
5
3
2
Ta=--25
°C
25°C
1.0
7
5
75
°C
Ta=--25
°C
75
°C
5
7 --1.0
2
3
5
7 --10
2
3
5
Collector Current, IC – mA
7 --100
ITR03001
3
5
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
700
7 100
ITR03002
ASO
3
2
PC -- Ta
2SA1207 / 2SC2909
2SA1207 / 2SC2909
ICP=140mA
IC=70mA
600
100
7
5
3
2
Collector Dissipation, P
C
– mW
Collector Current, IC – mA
s
1m
ms
10
ms
0
10
DC
Op
era
ti
on
500
400
300
10
7
5
3
2
5
200
Single pulse Ta=25°C
(For PNP, minus sign is omitted.)
7
10
2
3
5
7
100
2
ITR03003
100
0
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE – V
Ambient Temperature, Ta – ˚C
ITR03004
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
PS No.778-4/4
微控制器 MCU
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