Ordering number:ENN3512B
2SA1786 : PNP Epitaxial Planar Silicon Transistor
2SC4646 : NPN Triple Diffused Planar Silicon Transistor
2SA1786/2SC4646
High Voltage Driver Applications
Features
· Large current capacity (I
C
=2A).
· High breakdown voltage (V
CEO
≥400V).
Package Dimensions
unit:mm
2064A
[2SA1786/2SC4646]
2.5
1.45
6.9
1.0
4.5
1.0
0.6
1.0
0.9
1
2
3
0.5
0.45
( ) : 2SA1786
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.54
2.54
Ratings
(–)400
(–)400
(–)5
(–)2
(–)4
1
150
–55 to +150
4.0
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=(–)300V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)100mA
VCE=(–)10V, IC=(–)100mA
VCB=(–)30V, f=1MHz
IC=(–)500mA, IB=(–)50mA
IC=(–)500mA, IB=(–)50mA
40*
(40)60
(25)15
(–)1.0
(–)1.0
Conditions
Ratings
min
typ
max
(–)1.0
(–)1.0
200*
MHz
pF
V
V
Unit
µA
µA
* : The 2SA1786/2SC4646 are classified by 100mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/83198HA (KT)/12894TH AX-8287/4231MH/5180TA (KOTO) X-6912 No.3512–1/5
1.0
2SA1786/2SC4646
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Turn-OFF Time
Symbol
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
toff
IE=(–)10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Conditions
Ratings
min
(–)400
(–)400
(–)5
(0.12)
0.085
(3.0)
4.0
(0.3)
0.6
typ
max
Unit
V
V
V
µs
µs
µs
µs
µs
µs
Switching Time Test Circuit
IB1
IB2
INPUT
PW=20µs
D.C.≤1%
VR
50Ω
RB
+
100µF
+
470µF
VCC=150V
OUTPUT
RL
VBE=--5V
10IB1= --10IB2= IC=500mA
RL=300Ω,RB=20Ω, at IC=500mA
(For PNP, the polarity is reversed.)
--2.0
IC -- VBE
2SA1786
VCE=--10V
Collector Current, IC – A
2.0
IC -- VBE
2SC4646
VCE=10V
--1.6
1.6
Collector Current, IC – A
Ta=
75
°
C
--25
°
C
--1.2
1.2
5
°
C
0.2
0.4
0.6
C
25
°
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0
25
°
--0.4
0.4
C
Ta=
7
0.8
--0.8
0.8
--25
°
C
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE – V
3
2
ITR04683
3
2
hFE -- IC
Ta=75°C
Base-to-Emitter Voltage, VBE – V
ITR04684
hFE -- IC
2SA1786
VCE=--10V
Ta=75°C
--25
°C
25
°C
2SC4646
VCE=10V
100
100
DC Current Gain, hFE
DC Current Gain, hFE
7
5
3
2
25°C
--25°C
7
5
3
2
10
7
5
3
3
5 7 --10
2
3
5 7 --100
2
3
10
7
5
3
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
2 3
mA
ITR04686
Collector Current, IC –
5 7--1000 2 3
ITR04685
mA
Collector Current, IC –
No.3512–2/5
2SA1786/2SC4646
3
f T -- IC
Gain-Bandwidth Product, fT – MHz
Gain-Bandwidth Product, fT – MHz
2
2SA1786
VCE=--10V
3
2
f T -- IC
2SC4646
VCE=10V
100
7
5
3
2
100
7
5
3
2
10
7
5
3
5
7 --10
2
3
5
7 --100
2
3
7 --1000
ITR04687
5
10
7
5
3
5
7
10
2
3
5
7 100
2
3
5 7 1000
ITR04688
Collector Current, IC – mA
3
2
Cob -- VCB
Collector Current, IC – mA
3
2
Cob -- VCB
2SA1786
f=1MHz
Output Capacitance, Cob -- pF
2SC4646
f=1MHz
Output Capacitance, Cob -- pF
100
7
5
3
2
100
7
5
3
2
10
7
5
3
10
7
5
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
V
ITR04689
7
1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB --
3
2
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
3
7 100
2
ITR04690
VCE(sat) -- IC
2SA1786
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2
2SC4646
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
--1.0
7
5
3
2
1.0
7
5
3
2
--0.1
7
5
3
3
5
7 --10
2
3
5
7 --100
2
3
5
7 --1000
Ta=75°C
--25°C
25
°C
0.1
7
5
3
5
7
10
Ta=75
°C
25
°
C
--25
°C
2
3
5
7 100
2
3
5 7 1000
ITR04692
Collector Current, IC – mA
--10
7
ITR04691
10
VBE(sat) -- IC
Collector Current, IC – mA
VBE(sat) -- IC
2SC4646
IC / IB=10
2SA1786
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
7
5
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
5
3
2
3
2
--1.0
7
5
1.0
7
5
Ta=--25
°C
Ta=--25
°C
75
°C
25
°
C
75
°
C
3
5
7 10
2
3
25
°
C
3
3
5
7 --0.1
2
3
5
7 --100
2
3
5
7 --1000
2
3
5
7 100
2
3
5
Collector Current, IC – mA
ITR04695
Collector Current, IC – mA
7 1000
2
ITR04694
No.3512–3/5
2SA1786/2SC4646
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
SW Time -- IC
2SA1786
Switching Time, SW Time --
µs
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
7
SW Time -- IC
2SC4646
ts
tg
Switching Time, SW Time --
µs
tstg
tf
tr
to
n
to
n
VCC=150V
10IB1=--10IB2=IC
7 --10
2
3
5
7 --100
2
3
5
7--1000
2
3
VCC=--150V
10IB1=--10IB2=IC
10
2
3
5
7 100
2
3
5
7 1000
2
3
Collector Current, IC – mA
--10
5
3
2
ITR04693
10
ASO
Collector Current, IC – mA
ITR04696
ASO
ICP=–4A
IC=–2A
2SA1786
Single pulse
Tc=25°C
Collector Current, IC – A
s
1m s
10m
0ms
10
5
3
2
1.0
5
3
2
0.1
5
3
2
0.01
5
ICP=4A
IC=2A
2SC4646
Single pulse
Tc=25°C
Collector Current, IC – A
--1.0
5
3
2
--0.1
5
3
2
s
1m
ms
10
ms
0
10
DC
op
DC
er
op
ati
on
er
a
tio
n
--0.01
5
3
2
--0.1
2 3
5
--1.0
2 3
5
--10
2 3
Collector-to-Emitter Voltage, VCE – V
1.2
5 --100 2 3 5 --1000
ITR04697
3
2
0.1
2 3
5
1.0
2 3
5
10
2 3
5
100
2 3
PC -- Ta
Collector-to-Emitter Voltage, VCE – V
5 1000
ITR04698
2SA1786 / 2SC4646
1.0
Collector Dissipation, P
C
– W
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR04699
No.3512–4/5
2SA1786/2SC4646
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.3512–5/5
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