Power Transistors
2SD1485
Silicon PNP triple diffusion planar type
Unit: mm
For high power amplification
Complementary to 2SB1054
■
Features
•
Excellent collector current I
C
characteristics of forward current
transfer ratio h
FE
•
Wide safe operation area
•
High transition frequency f
T
•
Full-pack package which can be installed to the heat sink with one
screw
21.0
±0.5
15.0
±0.3
(0.7)
5.0
±0.2
(3.2)
11.0
±0.2
φ
3.2
±0.1
15.0
±0.2
(3.5)
Solder Dip
2.0
±0.2
1.1
±0.1
2.0
±0.1
0.6
±0.2
16.2
±0.5
5.45
±0.3
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
100
100
5
5
8
60
3.0
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
10.9
±0.5
1
2
3
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
BE
I
CBO
I
EBO
h
FE1
h
FE2 *
h
FE3
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
V
CE
=
5 V, I
C
=
3 A
V
CB
=
100 V, I
E
=
0
V
EB
=
3 V, I
C
=
0
V
CE
=
5 V, I
C
=
20 mA
V
CE
=
5 V, I
C
=
1 A
V
CE
=
5 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.3 A
V
CE
=
5 V, I
C
=
0.5 A, f
=
1 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
20
90
20
60
20
2.0
V
MHz
pF
200
Min
Typ
Max
1.8
50
50
Unit
V
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Q
60 to 120
P
100 to 200
Publication date: September 2003
SJD00199BED
1
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and semiconductors described in this material
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•
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•
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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