Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
| 参数名称 | 属性值 |
| 包装说明 | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 1.5 A |
| 集电极-发射极最大电压 | 160 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 100 |
| JESD-30 代码 | R-PSIP-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 18 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 180 MHz |
| Base Number Matches | 1 |
| 2SD2123LC | 2SD2122LB | 2SD2122LC | 2SD2122SB | 2SD2122SC | 2SD2123SC | 2SD2123SB | 2SD2123LB | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon |
| 包装说明 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A |
| 集电极-发射极最大电压 | 160 V | 120 V | 120 V | 120 V | 120 V | 160 V | 160 V | 160 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 100 | 60 | 100 | 60 | 100 | 100 | 60 | 60 |
| JESD-30 代码 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 2 | 2 | 2 | 2 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 18 W | 18 W | 18 W | 18 W | 18 W | 18 W | 18 W | 18 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | YES | YES | YES | YES | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | GULL WING | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 180 MHz | 180 MHz | 180 MHz | 180 MHz | 180 MHz | 180 MHz | 180 MHz | 180 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
FPGA/CPLD
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