Data Sheet
Medium Power Transistor (50V,0.5A)
2SD1949 / 2SD1484K
Features
1) High current.(I
C
=0.5A)
2) Low saturation voltage, typically V
CE(sat)
=0.1V at I
C
/ I
B
=150mA / 15mA.
Dimensions
(Unit : mm)
UMT3
(SC-70)
<SOT-323>
(1) Emitter
(2) Bace
(3) Collector
Absolute maximum rationgs
(Ta=25 C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
50
50
5
0.5
0.2
150
−55
to +150
Unit
V
V
V
A
W
C
C
SMT3
(SC-59)
<SOT-346>
2.9
0.4
(3)
1.1
0.8
(2)
(1)
1.6
2.8
0.95 0.95
0.15
(1) Emitter
(2) Bace
(3) Collector
1.9
Electrical characteristics
(Ta=25 C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
DC current rransfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
50
50
5
−
−
120
−
−
−
Typ.
−
−
−
−
−
−
−
250
6.5
Max.
−
−
−
0.5
0.5
390
0.4
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
I
C
=
100µA
I
C
=
1mA
I
E
=
100µA
Conditions
V
CB
=
30V
V
EB
=
4V
V
CB
=
10V , I
E
=
0A , f
=
1MHz
I
C
/I
B
=
150mA/15mA
V
CE
=
5V , I
E
=
−20mA
, f
=
100MHz
V
CE
/I
C
=
3V/10mA
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pleces)
Danotes h
FE
2SD1949
UMT3
QR
Y
T106
3000
2SD1484K
SMT3
QR
Y
T146
3000
h
FE
values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 -
Rev. E
0.3Min.
2SD1949 / 2SD1484K
Data Sheet
Electrical characteristic curves
200
V
CE
=6V
100
COLLECTOR CURRENT : I
C
(mA)
0.50
V
CE
=6V
0.45
0.40
0.35
1000
500
DC CURRENT GAIN h
FE
Ta=25 C
COLLECTOR CURRENT : I
C
(mA)
100
50
20
10
C
80
60
0.30
0.25
200
1V
V
CE
=3V
25 C
Ta=100
-25 C
5
2
1
0.5
0.2
0.1
0
0.2
40
0.20
0.15
100
20
0.10
0.05
I
B
=0mA
50
0.4
0.6
0.8
1.0
1.2
0
0
1
2
3
4
5
0.1 0.2 0.5 1 2
5 10 20
50 100 200 500
BASE TO VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
Fig.1 Ground emitter propagation
characteristics
Fig.2 Ground emitter output characteristics
Fig.3 DC current gain vs. Collector current ( )
1000
500
DC CURRENT GAIN h
FE
Ta=75 C
25 C
V
CE
=10V
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
Ta=25 C
0.5
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
0.5
I
C
/I
B
=10
0.2
100/1
I
C
/I
B
=
50/1
200
-25 C
0.2
0.1
100
0.1
50
0.05
20/1
10/1
0.05
25 C
Ta=75 C
-25 C
20
1
2
5
10 20
50 100 200 500 1000
0.02
5
10
20
50 100 200
500
0.02
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
Fig.4 DC current gain vs. Collector currnet ( )
Fig.5 Collector-emitter saturation voltage
vs. Collector current
Fig.6 Collector-emitter saturation voltage
vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
50
Cib
Ta=25 C
f=1MHz
I
E
=0A
Ta=25 C
500
TRANSITION
FREQUENCY : f
T
(MH
Z
)
V
CE
=6V
20
Cob
10
200
5
100
0.1 0.2
0.5
1
2
5
10 20
-1
-2
-5
-10
-20
-50
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
EMITTER CURRENT : I
E
(mA)
Fig.7 Input-and-output capacity
vs.voltage characteristic
Fig.8 Transition frequency
vs.emitter current
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.06 -
Rev. E
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