Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1235
DESCRIPTION
·With
TO-220C package
·Complement
to type 2SB919
·Low
collector saturation voltage
·Large
current capacity.
APPLICATIONS
·Large
current switching of relay drivers,
high-speed inverters,converters
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
T
C
=25℃
P
C
Collector dissipation
1.75
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
60
30
6
8
15
30
W
UNIT
V
V
V
A
A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=1mA ;R
BE
=∞
I
C
=1mA ;I
E
=0
I
E
=1mA; I
C
=0
I
C
=3A; I
B
=0.15A
V
CB
=40V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=2V
I
C
=4A ; V
CE
=2V
I
C
=1A ; V
CE
=5V
70
30
MIN
30
60
6
2SD1235
TYP.
MAX
UNIT
V
V
V
0.4
100
100
280
V
μA
μA
120
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=20I
B1
=-20I
B2
=4A
V
CC
=10V,R
L
=2.5Ω
0.1
0.5
0.03
μs
μs
μs
h
FE-1
Classifications
Q
70-140
R
100-200
S
140-280
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1235
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1235
4
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