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2SC2884YTE12L

产品描述TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小122KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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2SC2884YTE12L概述

TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SC2884YTE12L规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknow
ECCN代码EAR99
外壳连接COLLECTOR
最大集电极电流 (IC)0.8 A
集电极-发射极最大电压30 V
配置SINGLE
最小直流电流增益 (hFE)35
JESD-30 代码R-PSSO-F3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置SINGLE
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)120 MHz
VCEsat-Max0.5 V
Base Number Matches1

文档预览

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2SC2884
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2884
Audio Frequency Amplifier Applications
High DC current gain: h
FE
= 100 to 320
Suitable for output stage of 1 watts amplifier
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1204
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
35
30
5
800
160
500
1000
150
−55
to 150
mW
Unit
V
V
V
mA
mA
PW-MINI
JEDEC
JEITA
SC-62
2-5K1A
°C
°C
TOSHIBA
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm
2
× 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21

2SC2884YTE12L相似产品对比

2SC2884YTE12L 2SC2884OTE12L 2SC2884OTE12R 2SC2884-O 2SC2884YTE12R 2SC2884TE12R 2SC2884TE12L
描述 TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
包装说明 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
集电极-发射极最大电压 30 V 30 V 30 V 30 V 30 V 30 V 30 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 35 35 35 100 35 35 35
JESD-30 代码 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
元件数量 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V
Base Number Matches 1 1 1 1 1 1 -
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