2SC2884
Elektronische Bauelemente
0.8A, 35V
NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
Complementary to 2SA1204
High DC Current Gain
A
SOT-89
4
1 2
3
E
C
CLASSIFICATION OF h
FE
Product Rank
Range
MARKING
2SC2884-O
100~200
PO1
2SC2884-Y
160~320
PY1
B
F
G
H
D
K
J
L
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
Leader Size
7’ inch
1
Base
Collector
24
REF.
A
B
C
D
E
F
3
Emitter
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
1.2
0.89
0
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Power Dissipation
Thermal Resistance From Junction To
Ambient
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
T
J
, T
STG
Ratings
35
30
5
0.8
0.5
250
150, -55~150
Unit
V
V
V
A
W
°
C/W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
OB
Min.
35
30
5
-
-
-
100
35
-
0.5
-
-
Typ.
-
-
-
-
-
-
-
-
-
120
13
Max.
-
-
-
0.1
0.1
320
-
0.5
0.8
-
-
Unit
V
V
V
µA
µA
Test Conditions
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=35V,
I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 1 V, I
C
= 0.1 A
V
CE
= 1 V, I
C
= 0.7 A
V
V
MHz
pF
I
C
= 0.5 A, I
B
= 20mA
I
C
= 10mA, V
CE
=1V
V
CE
=5V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
13-Dec-2013 Rev. A
Page 1 of 1
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