Ordering number : EN2483D
2SC4162
SANYO Semiconductors
DATA SHEET
NPN Triple Diffused Planar Silicon Transistor
2SC4162
Features
•
•
•
•
•
400V / 10A Switching Regulator
Applications
High breakdown voltage, high reliability.
High-speed switching (tf : 0.1µs typ).
Wide ASO.
Adoption of MBIT process.
Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
PW≤300µs, duty cycle≤10%
Tc=25°C
Conditions
Ratings
500
400
7
10
20
2.0
35
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=400V, IE=0A
VEB=5V, IC=0A
Ratings
min
typ
max
10
10
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60607KB TI IM TC-00000750 / 72204TN(PC)/D0198HA (KT)/3267TA, TS No.2483-1/4
2SC4162
Continued from preceding page.
Parameter
Symbol
hFE1
hFE2
hFE3
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
Conditions
VCE=5V, IC=1.2A
VCE=5V, IC=6A
VCE=5V, IC=10mA
VCE=10V, IC=1.2A
VCB=10V, f=1MHz
IC=6A, IB=1.2A
IC=6A, IB=1.2A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
IC=4.5A, IB1=0.45A, IB2=--1.8A, L=500µH, Clamped
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
500
400
7
400
0.5
2.5
0.3
Ratings
min
15*
10
10
20
120
0.8
1.5
MHz
pF
V
V
V
V
V
V
µs
µs
µs
typ
max
50*
Unit
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
* : The hFE1 of the 2SC4162 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Rank
L
M
N
hFE
15 to 30
20 to 40
30 to 50
Package Dimensions
unit : mm (typ)
7508-002
10.0
3.2
3.5
7.2
Switching Time Test Circuit
4.5
2.8
PW=20µs
duty factor
≤
1%
INPUT
OUTPUT
IB1
RB
IB2
VR
RL
+
100µF
VBE=--5V
+
470µF
VCC=200V
18.1
1.6
1.2
0.75
14.0
5.6
16.0
50Ω
0.7
1 2 3
2.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
2.55
2.55
10
IC -- VCE
A
mA
00
900m
mA
10
800
mA
700
A
600m
500mA
400mA
300mA
10
IC -- VBE
VCE=5V
Collector Current, IC -- A
8
6
Collector Current, IC -- A
8
6
0
°
C
4
2
0
0
0.2
0.4
0.6
4
200mA
100mA
2
0
0
2
4
IB=0mA
6
8
10
ITR06410
Ta=1
2
0.8
--40
°
C
1.0
25
°
C
1.2
1.4
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
ITR06411
No.2483-2/4
2SC4162
100
7
5
hFE -- IC
VCE=5V
1.0
7
5
VCE(sat) -- IC
IC / IB=5
Ta=120
°
C
25
°
C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
DC Current Gain, hFE
3
2
3
2
--40
°C
10
7
5
5
7
0.1
2
3
5
7
1.0
2
3
5
0.1
7
5
°
C
20
=1
C
Ta
25
°
C
0
°
-4
-
Collector Current, IC -- A
10
7
10
ITR06412
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
7
0.1
2
3
5
7
1.0
2
3
5
VBE(sat) -- IC
Collector Current, IC -- A
7 10
ITR06413
SW Time -- IC
VCC=200V
IC=5IB1= --2.5IB2
R load
IC / IB=5
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Switching Time, SW Time --
µs
5
tstg
3
2
1.0
7
5
3
5
7
0.1
2
Ta= --40
°
C
t on
tf
25
°
C
120
°
C
3
5
7
1.0
2
3
5
7 10
ITR06414
7
5
0.1
2
3
5
7
1.0
2
3
5
7
Collector Current, IC -- A
3
2
10
Collector Current, IC -- A
3
2
10
2
10
ITR06415
Forward Bias A S O
ICP=20A
IC=10A
DC
Reverse Bias A S O
ICP=20A
IB2= --1.8A constant
L=100µH
Tc=25°C
≤50µs
10
s
0
µ
Collector Current, IC -- A
5
3
2
1.0
5
3
2
0.1
5
3
2
3
Collector Current, IC -- A
5
7
op
era
tio
n
7
5
3
2
1.0
7
5
3
2
0.1
10
ms
S
1m
s
/B
Li
m
ite
d
Tc=25
°C
Single pulse
5
7
10
2
3
5
7 100
2
3
5
7
100
2
3
5
Collector-to-Emitter Voltage, VCE -- V
2.4
ITR06416
40
35
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
7
1000
ITR06417
PC -- Tc
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
2.0
30
25
20
15
10
5
1.6
No
1.2
he
at
s
in
k
0.8
0.4
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°
C
ITR06418
Case Temperature, Tc --
°
C
ITR06419
No.2483-3/4
2SC4162
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of June, 2007. Specifications and information herein are subject
to change without notice.
PS No.2483-4/4
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