Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4161
DESCRIPTION
・With
TO-220F package
・High
breakdown voltage.
・High
reliability.
・Fast
switching speed
APPLICATIONS
・Switching
regulator applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
500
400
7
7
14
3
UNIT
V
V
V
A
A
A
T
C
=25℃
P
C
Collector dissipation
30
W
2
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=5mA ; R
BE
=∞
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=4A ;I
B
=0.8A
I
C
=4A ;I
B
=0.8A
V
CB
=400V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.8A ; V
CE
=5V
I
C
=4A ; V
CE
=5V
I
C
=10mA ; V
CE
=5V
15
10
MIN
400
500
7
TYP.
2SC4161
MAX
UNIT
V
V
V
0.8
1.5
10
10
50
V
V
μA
μA
固电
Output capacitance
Transition frequency
导½
半
I
E
=0; V
CB
=10V;f=1MHz
I
C
=0.8A ; V
CE
=10V
Switching times
t
on
t
s
t
f
HA
INC
Turn-on time
Storage time
Fall time
ES
NG
MIC
E
OR
CT
NDU
O
10
80
20
0.5
2.5
0.3
pF
MHz
μs
μs
μs
I
C
=5A; I
B1
=1A
I
B2
=-2A
V
CC
=200V ,R
L
=40Ω
h
FE-1
Classifications
L
15-30
M
20-40
N
30-50
2
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