2SD1781K
Elektronische Bauelemente
NPN Silicon
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Very low V
CE
(sat).V
CE
(sat) < 0.4 V (Typ.)
(I
C
/I
B
= 500mA / 50mA)
Complements to 2SB1197K
2
Base
Collector
A
L
3
3
3
Top View
1
2
C B
1
2
K
E
D
1
Emitter
F
REF.
G
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
H
J
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
MARKING
AF
= hFE ranking
A
B
C
D
E
F
REF.
G
H
J
K
L
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
40
32
5
0.8
200
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector–Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
(T
A
= 25°C unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
OB
Min.
40
32
5
-
120
-
-
-
Typ.
-
-
-
-
-
-
150
10
Max.
-
-
-
0.5
0.5
390
0.4
-
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
I
C
= 50μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50μA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100mA, V
CE
= 3.0V
I
C
= 500mA, I
B
= 50mA
V
CE
= 5V, I
C
= 50mA, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
CLASSIFICATION OF h
FE
Rank
Range
Marking
Q
120 – 270
AFQ
R
180-390
AFR
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2002 Rev. A
Page 1 of 2
2SD1781K
Elektronische Bauelemente
NPN Silicon
Plastic Encapsulated Transistor
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2002 Rev. A
Page 2 of 2
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