Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3944 2SC3944A
DESCRIPTION
·With
TO-220Fa package
·Complement
to type 2SA1535/1535A
·High
transition frequency
APPLICATIONS
·For
low-frequency driver and high
power amplification
·Optimum
for the driver-stage of a 60W
to 100W output amplifier
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
·
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
2SC3944
V
CBO
Collector-base voltage
2SC3944A
2SC3944
V
CEO
Collector-emitter voltage
2SC3944A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
15
150
-55~150
℃
℃
Open collector
Open base
180
5
1.0
1.5
2.0
W
V
A
A
Open emitter
180
150
V
CONDITIONS
VALUE
150
V
UNIT
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SC3944
V
(BR)CEO
Collector-emitter
breakdown voltage
2SC3944A
V
(BR)EBO
V
CEsat
V
BEsat
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC3944
I
CBO
Collector
cut-off current
2SC3944A
h
FE-1
h
FE-2
f
T
C
OB
DC current gain
DC current gain
Transition frequency
Output capacitance
V
CB
=180V; I
E
=0
I
C
=150mA ; V
CE
=10V
I
C
=500mA ; V
CE
=5V
I
C
=50mA ; V
CB
=10V
I
E
=0; V
CB
=10V;f=1MHz
I
E
=10μA; I
C
=0
I
C
=0.5 A;I
B
=50m A
I
C
=0.5 A;I
B
=50m A
V
CB
=150V; I
E
=0
I
C
=1mA; I
B
=0
CONDITIONS
2SC3944 2SC3944A
MIN
150
TYP.
MAX
UNIT
V
180
5
2.0
2.0
V
V
V
10
μA
95
50
200
30
220
MHz
pF
h
FE
classifications
Q
95-155
R
130-220
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3944 2SC3944A
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
