INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3446
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 500V(Min)
·High
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base voltage
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VALUE
UNIT
800
V
500
V
7
V
3
A
6
A
1
A
40
W
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 1mA; I
E
= 0
I
C
= 5mA; R
BE
=
∞
I
E
= 1m A; I
C
= 0
I
C
= 1.5A; I
B
= 0.3A
I
C
= 1.5A; I
B
= 0.3A
V
CB
= 500V; I
E
= 0
V
EB
= 5V; I
C
= 0
MIN
800
500
7
2SC3446
TYP.
MAX
UNIT
V
V
V
1.0
1.5
10
10
50
V
V
μA
μA
Current-Gain—Bandwidth Product
Output Capacitance
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I
C
= 0.3A; V
CE
= 5V
15
8
I
C
= 1.5A; V
CE
= 5V
I
C
= 0.3A; V
CE
= 10V
I
E
= 0; V
CB
= 10V; f
test
= 1.0MHz
I
C
= 2A, I
B1
= 0.4A; I
B2
= -0.8A
R
L
= 100Ω; V
CC
= 200V
18
50
MHz
pF
Switching Times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
0.5
3.0
0.3
μs
μs
μs
h
FE-1
Classifications
L
15-30
M
20-40
N
30-50
isc Website：www.iscsemi.cn
2
嵌入式系统
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