Datasheet> 器件分类 > 分立半导体> 晶体管> 2SC2881-Y(TE12L,C)

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2SC2881-Y(TE12L,C): 产品描述Trans GP BJT NPN 120V 0.8A 4-Pin(3+Tab) PW-Mini T/R; 产品类别分立半导体晶体管; 文件大小141KB，共4页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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2SC2881-Y(TE12L,C)概述

Trans GP BJT NPN 120V 0.8A 4-Pin(3+Tab) PW-Mini T/R

2SC2881-Y(TE12L,C)规格参数

参数名称	属性值
Reach Compliance Code	unknow
Factory Lead Time	16 weeks
Base Number Matches	1

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2SC2881

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process)

2SC2881

Voltage Amplifier Applications

Power Amplifier Applications

•

High voltage: V

CEO

= 120 V

High transition frequency: f

= 120 MHz (typ.)

Small flat package

= 1.0 to 2.0 W (mounted on ceramic substrate)

Complementary to 2SA1201

Unit: mm

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Symbol

CBO

CEO

EBO

Collector power dissipation

(Note 1)

Junction temperature

Storage temperature range

stg

Rating

120

800

160

500

1000

150

−55

to 150

Unit

PW-MINI

JEDEC

JEITA

TOSHIBA

―

SC-62

2-5K1A

°C

Weight: 0.05 g (typ.)

Note 1: Mounted on a ceramic substrate (250 mm

× 0.8 t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-21

2SC2881

RESTRICTIONS ON PRODUCT USE

•

Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

•

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

•

Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications.

TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR

APPLICATIONS.

•

Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious

public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used

in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling

equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric

power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this

document.

•

Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

•

Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

•

The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any

infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to

any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

•

ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE

FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY

WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR

LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND

LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO

SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS

FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

•

Do not use or otherwise make available Product or related software or technology for any military purposes, including without

limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile

technology products (mass destruction weapons). Product and related software and technology may be controlled under the

Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product

or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

•

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

2009-12-21

2SC2881-Y(TE12L,C)相似产品对比

	2SC2881-Y(TE12L,C)	2SC2881-O	2SC2881OTE12R	2SC2881OTE12L	2SC2881-Y	2SC2881YTE12L	2SC2881YTE12R	2SC2881TE12L	2SC2881TE12R
描述	Trans GP BJT NPN 120V 0.8A 4-Pin(3+Tab) PW-Mini T/R	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Base Number Matches	1	1	1	1	1	1	1	1	1
包装说明	-	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
ECCN代码	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	-	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	-	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
基于收集器的最大容量	-	30 pF	30 pF	30 pF	30 pF	30 pF	30 pF	30 pF	30 pF
集电极-发射极最大电压	-	120 V	120 V	120 V	120 V	120 V	120 V	120 V	120 V
配置	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	-	80	80	80	120	120	120	80	80
JESD-30 代码	-	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
元件数量	-	1	1	1	1	1	1	1	1
端子数量	-	3	3	3	3	3	3	3	3
最高工作温度	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	-	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	-	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	-	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	-	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz
VCEsat-Max	-	1 V	1 V	1 V	1 V	1 V	1 V	1 V	1 V

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