Ordering number : EN3714A
2SB1508 / 2SD2281
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1508 / 2SD2281
Applications
•
High-Current Switching
Applications
Relay drivers, high-speed inverters, converters.
Features
•
•
•
Low collector-to-emitter saturation voltage: VCE(sat)=-
-0.5V (PNP), 0.4V (NPN) max.
Wide ASO and highly registant to breakdown.
Micaless package facilitating easy mounting.
Specifications
( ) : 2SB1508
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)60
(--)50
(-
-)6
(--)12
(--)25
3.0
45
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)1A
VCE=(--)2V, IC=(--)5A
VCE=(--)5V, IC=(--)1A
70*
30
10
MHz
Ratings
min
typ
max
(--)0.1
(--)0.1
280*
Unit
mA
mA
Continued on next page.
* : The 2SBB1508 / 2SD2281 are classified by 1A hFE as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0606FA TI IM TC-00000359 / N1098HA (KT) / 5111MH, JK (KOTO) No.3714-1/4
2SB1508 / 2SD2281
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=(--)6A, IB=(--)0.3A
IC=(--)1mA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)1mA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
(--)60
(--)50
(--)6
(0.2)0.1
(0.4)1.2
(0.1)0.5
typ
max
(-
-0.5)0.4
Unit
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm (typ)
7505-002
Switching Time Test Circuit
16.0
3.4
5.6
3.1
PW=20µs
tr, tf≤15ns
INPUT
IB1
IB2
1Ω
RB
OUTPUT
5.0
8.0
22.0
2.0
VR
50Ω
21.0
100Ω
+
100µF
+
470µF
RL
4Ω
4.0
2.8
2.0
2.0
20.4
--5V
0.6
20V
1.0
1
2
3
3.5
10IB1= --10IB2=IC=5A
For PNP, the polarity is reversed.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
5.45
5.45
--16
--14
IC -- VCE
mA
A
--1
--800
mA
0
--60
1A
14
Collector Current, IC -- A
--12
--10
--8
--6
--4
--2
0
0
--0.2
--0.4
--0.6
--0.8
Collector Current, IC -- A
mA
--400
12
10
8
6
4
2
0
0
0.2
0.4
0.6
60
0m
A
2SB1508
16
IC -- VCE
400m
A
2SD2281
200mA
--200mA
--100mA
--80mA
--60mA
--40mA
--20mA
IB=0mA
--1.0
--1.2
--1.4
100mA
80mA
60mA
40mA
20mA
IB=0mA
0.8
1.0
1.2
1.4
Collector-to-Emitter Voltage, VCE -- V
ITR09843
Collector-to-Emitter Voltage, VCE -- V
ITR09844
No.3714-2/4
2SB1508 / 2SD2281
--16
--14
IC -- VBE
2SB1508
VCE=
--2V
Collector Current, IC -- A
16
14
12
10
8
6
4
2
0
IC -- VBE
2SD2281
VC
E =2V
0
0.2
0.4
0.6
0.8
1.0
Collector Current, IC -- A
--12
--10
--8
--6
--4
--2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
1.2
1.4
Base-to-Emitter Voltage, VBE -- V
1000
7
5
3
ITR09845
1000
7
5
3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
ITR09846
hFE -- IC
2SB1508
2SD2281
DC Current Gain, hFE
DC Current Gain, hFE
2
100
7
5
3
2
10
7
5
3
2
2
3
5
VCE=
--2V
2
100
7
5
3
2
10
7
5
3
2
2
VCE=2V
7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
2
3
5 7 --0.1
5 7 --10
2
ITR09847
3
5
7 0.1
2
3
5
7 1.0
2
3
5
VCE(sat) -- IC
Collector Current, IC -- A
10
5
7 10
2
ITR09848
VCE(sat) -- IC
2SB1508
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SD2281
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
1.0
5
3
2
0.1
5
3
2
0.01
=20
IC / IB
=10
IC / IB
2
3
5 7 --1.0
2
3
5
=20
/ IB
IC
10
I B=
/
IC
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
ITR09850
Collector Current, IC -- A
5
7 --10
2
ITR09849
5
ASO
Collector Current, IC -- A
ASO
ICP= --25A
2
PT
≤
100µs
2
ICP=25A
Collector Current, IC -- A
10
5
200µs
PT
≤
100µs
20
s
0
µ
Collector Current, IC -- A
--10
5
IC= --12A
10
50
0m
s
IC=12A
10
50
0
µ
s
10
ms
0m
s
1m
s
0
µ
1m
s
s
10
2
2
ms
DC
DC
--1.0
5
2
--0.1
5
5
1.0
5
2
op
era
tio
n
op
era
tio
n
2SB1508
Tc=25
°C
1ms to 100ms: Single pulse
--1.0
2
5
--10
2
5
0.1
5
--100
IT11888
5
2SD2281
Tc=25
°C
1ms to 100ms: Single pulse
1.0
2
5
10
2
5
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
100
IT11889
No.3714-3/4
2SB1508 / 2SD2281
3.2
3.0
2.8
45
PC -- Ta
50
PC -- Tc
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
40
2.4
2.0
30
N
o
sin
at
he
1.6
1.2
0.8
0.4
0
0
20
40
60
k
80
100
120
140
160
20
10
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR09853
Case Temperature, Tc --
°C
ITR09854
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
PS No.3714-4/4
工业自动化与控制
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