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MUN2113T3

产品描述100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
产品类别分立半导体    晶体管   
文件大小380KB,共38页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

MUN2113T3概述

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN

MUN2113T3规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ON Semiconductor(安森美)
零件包装代码SC-59
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)80
JESD-30 代码R-PDSO-G3
JESD-609代码e0
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型PNP
认证状态Not Qualified
表面贴装YES
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is designed
for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
R1
PIN3
COLLECTOR
(OUTPUT)
MUN2111T1
SERIES
Motorola Preferred Devices
PNP SILICON
BIAS RESISTOR
TRANSISTOR
The SC–59 package can be soldered using wave or reflow.
PIN2
The modified gull–winged leads absorb thermal stress during
BASE R2
soldering eliminating the possibility of damage to the die.
(INPUT)
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
PIN1
EMITTER
(GROUND)
3
2
1
CASE 318D–03, STYLE 1
(SC–59)
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Collector–Base Voltage
Collector–Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Symbol
VCBO
VCEO
IC
PD
Value
50
50
100
*200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
R
θJA
TJ, Tstg
TL
625
– 65 to +150
260
10
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1(2)
MUN2116T1(2)
MUN2130T1(2)
MUN2131T1(2)
MUN2132T1(2)
MUN2133T1(2)
MUN2134T1(2)
Marking
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
10
22
47
47
1.0
2.2
4.7
47
47
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–731

MUN2113T3相似产品对比

MUN2113T3 MUN2116T3 SMUN2112T3 MUN2115T3 MUN2133T3 MUN2134T3 MUN2130T3
描述 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN, BIP General Purpose Small Signal 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SC-59, 3 PIN
针数 3 3 3 3 3 3 3
Reach Compliance Code compliant compli compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR RATIO IS 10 BUILT IN BIAS RESISTOR RATIO IS 2.13 BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 80 160 60 160 80 80 3
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e0 e0 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
厂商名称 ON Semiconductor(安森美) - ON Semiconductor(安森美) - - ON Semiconductor(安森美) ON Semiconductor(安森美)
是否无铅 - 含铅 - 含铅 含铅 含铅 含铅
最高工作温度 - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Base Number Matches - 1 1 1 1 - -

 
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