NDP6030L/J69Z概述

52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

NDP6030L/J69Z规格参数

参数名称	属性值
厂商名称	Texas Instruments(德州仪器)
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）	100 mJ
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	30 V
最大漏极电流 (ID)	52 A
最大漏源导通电阻	0.0135 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
功耗环境最大值	75 W
最大脉冲漏极电流 (IDM)	156 A
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大关闭时间（toff）	290 ns
最大开启时间（吨）	266 ns

NDP6030L/J69Z相似产品对比

	NDP6030L/J69Z	NDB6030L/S62Z	NDB6030L/L86Z	NDP6030L	NDB6030L/L99Z	NDB6030L
描述	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
厂商名称	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)
包装说明	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	30 V	30 V	30 V	30 V	30 V	30 V
最大漏极电流 (ID)	52 A	52 A	52 A	52 A	52 A	52 A
最大漏源导通电阻	0.0135 Ω	0.0135 Ω	0.0135 Ω	0.0135 Ω	0.0135 Ω	0.0135 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB	TO-263AB	TO-263AB	TO-220AB	TO-263AB	TO-263AB
JESD-30 代码	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1	1	1	1
端子数量	3	2	2	3	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
功耗环境最大值	75 W	75 W	75 W	75 W	75 W	75 W
最大脉冲漏极电流 (IDM)	156 A	156 A	156 A	156 A	156 A	156 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	YES	YES	NO	YES	YES
端子形式	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
最大关闭时间（toff）	290 ns	290 ns	290 ns	290 ns	290 ns	290 ns
最大开启时间（吨）	266 ns	266 ns	266 ns	266 ns	266 ns	266 ns
外壳连接	-	DRAIN	DRAIN	-	DRAIN	DRAIN

NDP6030L/J69Z

NDP6030L/J69Z概述

NDP6030L/J69Z规格参数

NDP6030L/J69Z相似产品对比

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