AP70SL1K4AH
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% R
g
& UIS Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
V
DS
@ T
j,max.
R
DS(ON)
I
D
3
750V
1.4Ω
3.2A
S
Description
AP70SL1K4A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
Absolute Maximum Ratings@T
j
=25
o
.
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
dv/dt
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
dv/dt
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
3
Pulsed Drain Current
1
MOSFET dv/dt Ruggedness (V
DS
= 0 …400V )
Total Power Dissipation
Total Power Dissipation
4
Single Pulse Avalanche Energy
5
Peak Diode Recovery dv/dt
6
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
+20
3.2
2.1
8.3
50
28.4
2
27
15
-55 to 150
-55 to 150
Units
V
V
A
A
A
V/ns
W
W
mJ
V/ns
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
4
Value
4.4
62.5
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201507271
AP70SL1K4AH
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Surface mounted on 1 in
2
copper pad of FR4 board
5.Starting T
j
=25
o
C , V
DD
=50V , L=150mH , R
G
=25Ω
6.I
SD
≦
I
D
, V
DD
≦
BV
DSS
, starting T
J
= 25
o
C
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
700
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
-
-
2.4
-
-
10.5
2.8
4.2
10
7
22
14
380
15
6
6
Typ.
0.8
150
520
Max. Units
-
1.4
5
-
100
+100
16.8
-
-
-
-
-
-
608
-
-
12
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=1A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
DS
=V
GS
, I
D
=250uA
V
DS
=20V, I
D
=1A
V
DS
=560V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=1.5A
V
DS
=480V
V
GS
=10V
V
DD
=400V
I
D
=1.5A
R
G
=10Ω
V
GS
=10V
V
GS
=0V
V
DS
=100V
f=1.0MHz
.
f=1.0MHz
Test Conditions
I
S
=1A, V
GS
=0V
Source-Drain Diode
Max. Units
-
-
-
V
ns
nC
I
S
=1.5, V
GS
=0V
dI/dt=50A/µs
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP70SL1K4AH
6
4
T
C
=25 C
5
o
10V
8.0V
7.0V
I
D
, Drain Current (A)
3
T
C
=150
o
C
I
D
, Drain Current (A)
10V
8.0V
7.0V
4
0.37Ω
2
6.0V
3
2
V
G
=6.0V
1
1
V
G
=5.0V
0
0
4
8
12
16
20
0
0
4
8
12
16
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.2
4
I
D
=1A
2
T
C
=25 C
Normalized R
DS(ON)
3
o
I
D
=1A
V
G
=10V
R
DS(ON)
(
Ω
)
1.8
1.6
.
2
1.4
1
1.2
1
4
6
8
10
0
-100
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
I
D
=250uA
6
1.5
Normalized V
GS(th)
I
S
(A)
4
1
T
j
= 150 C
o
T
j
= 25 C
o
2
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
-100
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP70SL1K4AH
12
f=1.0MHz
10000
10
I
D
=1.5A
V
DS
=480V
1000
V
GS
, Gate to Source Voltage (V)
8
C
iss
0.37Ω
C (pF)
100
6
10
4
C
oss
C
rss
2
1
0
0
4
8
12
16
0.1
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
200
400
600
800
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
1
Normalized Thermal Response (R
thjc
)
Operation in this area
limited by R
DS(ON)
Duty factor=0.5
0.2
I
D
(A)
0.1
0.05
0.1
10us
100us
1ms
10ms
DC
.
0.1
0.02
0.01
Single Pulse
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
T
C
=25
o
C
Single Pulse
0.001
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP70SL1K4AH
2
40
I
D
=1mA
1.6
P
D
, Power Dissipation(W)
-50
0
50
100
150
30
Normalized BV
DSS
1.2
20
0.8
10
0.4
0
-100
0
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
C
, Case Temperature(
o
C)
Fig 13. Normalized BV
DSS
v.s. Junction
Temperature
10
Fig 14. Total Power Dissipation
T
j
=25
o
C
8
R
DS(ON)
(
Ω
)
6
4
.
V
GS
=10V
2
0
0
1
2
3
4
5
6
I
D
, Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
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