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2SD1457AP: 产品描述Power Bipolar Transistor, 6A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3; 产品类别分立半导体晶体管; 文件大小182KB，共3页; 制造商Panasonic(松下); 官网地址http://www.panasonic.co.jp/semicon/e-index.html

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2SD1457AP概述

Power Bipolar Transistor, 6A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3

2SD1457AP规格参数

参数名称	属性值
零件包装代码	TO-3-3L
包装说明	FLANGE MOUNT, R-PSFM-T3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
外壳连接	ISOLATED
最大集电极电流 (IC)	6 A
集电极-发射极最大电压	200 V
配置	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)	2000
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	NPN
最大功率耗散 (Abs)	3 W
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	15 MHz
Base Number Matches	1

2SD1457AP相似产品对比

	2SD1457AP	2SD1457AO	2SD1457P	2SD1457Q	2SD1457O	2SD1457AQ
描述	Power Bipolar Transistor, 6A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3	Power Bipolar Transistor, 6A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3	Power Bipolar Transistor, 6A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3	Power Bipolar Transistor, 6A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3	Power Bipolar Transistor, 6A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3	Power Bipolar Transistor, 6A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3
零件包装代码	TO-3-3L	TO-3-3L	TO-3-3L	TO-3-3L	TO-3-3L	TO-3-3L
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
针数	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
最大集电极电流 (IC)	6 A	6 A	6 A	6 A	6 A	6 A
集电极-发射极最大电压	200 V	200 V	150 V	150 V	150 V	200 V
配置	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)	2000	4000	2000	700	4000	700
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
最大功率耗散 (Abs)	3 W	3 W	3 W	3 W	3 W	3 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	15 MHz	15 MHz	15 MHz	15 MHz	15 MHz	15 MHz
Base Number Matches	1	1	1	1	1	1

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由运算放大器LM386构成的实用放大电路f

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