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SGR20N40L / SGU20N40L
August 2001
IGBT
SGR20N40L / SGU20N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Features
•
•
•
•
•
High input impedance
High peak current capability (150A)
Easy gate drive
Surface Mount : SGR20N40L
Straight Lead : SGU20N40L
Application
Strobe flash.
C
C
G
G
E
D-PAK
GC E
I-PAK
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
CM (1)
P
C
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector - Emitter Voltage
Gate - Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
SGR / SGU20N40L
400
±
6
150
45
-40 to +150
-40 to +150
300
Units
V
V
A
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
(D-PAK)
R
θJA
(I-PAK)
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
3.0
50
110
Units
°C/W
°C/W
°C/W
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
SGR20N40L / SGU20N40L
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
450
--
--
--
--
--
--
10
±
0.1
V
µA
µA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
C-E Saturation Current
I
C
= 1mA, V
CE
= V
GE
I
C
= 150A, V
GE
= 4.5V
0.5
2.0
1.0
4.5
1.4
8.0
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GE
= 0V, V
CE
= 30V,
f = 1MHz
--
--
--
3800
50
35
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 300V, I
C
= 150A,
V
GE
= 4.5V, R
G
= 15Ω*
Resistive Load
--
--
--
--
0.2
1.7
0.3
1.5
--
--
0.5
2.0
µs
µs
µs
µs
* Notes : Recommendation of R
G
Value : R
G
≥15Ω
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
SGR20N40L / SGU20N40L
200
Common Emitter
T
C
= 25℃
7
5.0V
4.5V
Common Emitter
V
GE
= 4.5V
150A
Collector-Emitter Voltage, V
CE
[v]
Collector Current, I
C
[A]
150
4.0V
3.5V
6
5
100
3.0V
4
100A
V
GE
= 2.5V
50
3
I
C
= 70A
0
0
2
4
6
8
2
-50
0
50
100
150
Collector-Emitter Voltage, V
CE
[V]
Case Temperature, T
C
[
℃
]
Fig 1. Typical Output Characteristics
Fig 2. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T
C
= -40℃
20
Common Emitter
T
C
= 25℃
Collector-Emitter Voltage, V
CE
[V]
16
12
Gate-Emitter Voltage, V
GE
[V]
16
12
8
150A
4
100A
I
C
= 70A
0
0
1
2
3
4
5
6
8
150A
4
100A
I
C
= 70A
0
0
1
2
3
4
5
6
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
Fig 3. Saturation Voltage vs. V
GE
Fig 4. Saturation Voltage vs. V
GE
20
Common Emitter
T
C
= 125℃
10000
Cies
Collector-Emitter Voltage, V
CE
[V]
16
1000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
12
8
150A
100A
Capacitance [pF]
100
Coes
4
I
C
= 70A
0
0
1
2
3
4
5
6
10
0
10
Cres
20
30
40
Gate-Emitter Voltage, V
GE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2001 Fairchild Semiconductor Corporation
Fig 6. Capacitance Characteristics
SGR20N40L / SGU20N40L Rev. A1
SGR20N40L / SGU20N40L
6
Common Emitter
V
CC
= 300V, R
L
= 2Ω
T
C
= 25℃
200
175
Gate - Emitter Voltage, V
GE
[V]
Collector Peak Current, I
CP
[A]
150
125
100
75
50
25
4
2
0
0
10
20
30
40
50
60
0
0
2
4
6
8
10
Gate-Charge, Q
g
[nC]
Gate - Emitter Voltage, V
GE
[V]
Fig 7. Turn-On Characteristics vs.
Gate Resistance
Fig 8. Collector Current Limit vs.
Gate - Emitter Voltage Limit
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
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