RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-
sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-
nology provides broadband performance up to 0.5GHz with excellent thermal
performance. The heterojunction increases breakdown voltage and minimizes leak-
age current between junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke
are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Gain(dB)
Features
IP
3
=42dBm at 240MHz
Stable Gain Over
Temperature
Robust 1000V ESD, Class 1C
Operates From Single Supply
Low Thermal Resistance
Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
PA Driver Amplifier
Wireless Data, Satellite
Terminals
S-Parameters vs Frequency +25c
16
15.5
15
14.5
14
13.5
13
12.5
12
11.5
11
0
100
200
300
400
500
600
700
800
Freq
-25
900
-20
-15
-10
s21
s11
s22
Applications
0
IRL,ORL(dB)
-5
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Parameter
Small Signal Gain
Min.
Specification
Typ.
Max.
Unit
Condition
14.9
dB
70MHz
13.3
14.8
16.3
dB
240MHz
13.2
14.7
16.2
dB
500MHz
Output Power at 1dB Compression
20.1
dBm
70MHz
20.1
dBm
240MHz
18.4
19.9
dBm
400MHz
Output Third Order Intercept Point
40.0
dBm
70MHz
42.0
dBm
240MHz
39.0
41.0
dBm
400MHz
Input Return Loss
13.0
17.0
dB
500MHz
Output Return Loss
12.0
16.0
dB
500MHz
Noise Figure
3.3
4.3
dB
500MHz
Device Operating Voltage
4.5
4.9
5.3
V
Device Operating Current
82
90
98
mA
Thermal Resistance
43
°C/W
junction to lead
Test Conditions: V
S
=8V, I
D
=90mA Typ., T
L
=25°C. OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=33. Data with Application Circuit.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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