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SBB-2089

产品描述Wide Band Low Power Amplifier, 50MHz Min, 850MHz Max, 1 Func, GAAS,
产品类别无线/射频/通信    射频和微波   
文件大小739KB,共6页
制造商Qorvo
官网地址https://www.qorvo.com
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SBB-2089概述

Wide Band Low Power Amplifier, 50MHz Min, 850MHz Max, 1 Func, GAAS,

SBB-2089规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Qorvo
包装说明TO-243
Reach Compliance Codeunknown
特性阻抗50 Ω
构造COMPONENT
增益18.5 dB
最大输入功率 (CW)12 dBm
JESD-609代码e0
安装特点SURFACE MOUNT
功能数量1
端子数量3
最大工作频率850 MHz
最小工作频率50 MHz
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码TO-243
电源5 V
射频/微波设备类型WIDE BAND LOW POWER
最大压摆率98 mA
表面贴装YES
技术GAAS
端子面层Tin/Lead (Sn/Pb)

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Product Description
Sirenza Microdevices’ SBB-2089 is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-2089 does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-2089 product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
SBB-2089
SBB-2089Z
Pb
RoHS Compliant
&
Green
Package
50 - 850 MHz, Cascadable
Active Bias InGaP/GaAs HBT MMIC Amplifier
Product Features
Available in Lead Free, RoHS compliant, & Green packaging
IP3 = 42.8 dBm @ 240MHz
P1dB = 20.8 dBm @ 500MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design & Patent Pending Bias Circuit
Low Thermal Resistance
MSL 1 moisture rating
Gain & Return Loss vs. Frequency (w/ App. Ckt.)
30
20
10
0
dB
-10
-20
-30
-40
-50
50
Symbol
S21
S11
Applications
S22
150
250
350
450
550
Frequency (MHz)
Parameters
650
750
850
Units
Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
Wireless Data, Satellite Terminals
Frequency
Min.
Typ.
Max.
S
21
Small Signal Gain
dB
70 MHz
240 MHz
400 MHz
70 MHz
240 MHz
400 MHz
70 MHz
240 MHz
400 MHz
18.5
18.5
20
20
20
20
20
21
41
43
41
50 - 850
21.5
21.5
P
1dB
Output Power at 1dB Compression
dBm
18.5
IP
3
Bandwidth
IRL
ORL
S
12
NF
V
D
I
D
R
TH
, j-l
Test Conditions:
Third Order Intercept Point
S
11
, S
22
: Minimum 10dB Return Loss (typ.)
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
V
D
= 5V
T
L
= 25°C
I
D
= 90mA Typ.
Z
S
= Z
L
= 50 Ohms
dBm
MHz
dB
dB
dB
dB
V
mA
°C/W
39
70 -500MHz
70 -500MHz
70 -500MHz
500 MHz
15
11
20
14
22
2.7
5
3.7
5.3
98
82
90
48.8
OIP
3
Tone Spacing = 1MHz, Pout per tone = 0 dBm
Tested with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104005 Rev C

 
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