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SBB-2089Z

产品描述Wide Band Low Power Amplifier, 50MHz Min, 850MHz Max, 1 Func, GAAS, GREEN PACKAGE-3
产品类别无线/射频/通信    射频和微波   
文件大小459KB,共7页
制造商Qorvo
官网地址https://www.qorvo.com
标准  
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SBB-2089Z概述

Wide Band Low Power Amplifier, 50MHz Min, 850MHz Max, 1 Func, GAAS, GREEN PACKAGE-3

SBB-2089Z规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Qorvo
包装说明TO-243
Reach Compliance Codeunknown
特性阻抗50 Ω
构造COMPONENT
增益18.5 dB
最大输入功率 (CW)12 dBm
JESD-609代码e3
安装特点SURFACE MOUNT
功能数量1
端子数量3
最大工作频率850 MHz
最小工作频率50 MHz
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码TO-243
电源5 V
射频/微波设备类型WIDE BAND LOW POWER
最大压摆率98 mA
表面贴装YES
技术GAAS
端子面层Matte Tin (Sn)

文档预览

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SBB2089Z
50MHz to 850MHz, CASCADABLE
ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBB2089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB2089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB2089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
dB
30.0
20.0
10.0
0.0
Features
OIP
3
=42.8dBm at 240MHz
P
1dB
=20.8dBm at 500MHz
Single Fixed 5V Supply
Robust 2000V ESD, Class 2
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
Wireless Data, Satellite Termi-
nals
Gain and Return Loss versus Frequency
(w/ App. Ckt.)
S21
Applications
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
-10.0
-20.0
-30.0
-40.0
-50.0
50.0
S22
S11
S11
S21
S22
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
Frequency (MHz)
Parameter
Small Signal Gain
Min.
Specification
Typ.
Max.
Unit
Condition
20.0
dB
70MHz
18.5
20.0
21.5
dB
240MHz
18.5
20.0
21.5
dB
400MHz
Output Power at 1dB Compression
20.0
dBm
70MHz
20.0
dBm
240MHz
18.5
21.0
dBm
400MHz
Third Order Intercept Point
41.0
dBm
70MHz
43.0
dBm
240MHz
39.0
41.0
dBm
400MHz
Return Loss
50 to 850
MHz
Minimum 10dB
Input Return Loss
15.0
20.0
dB
70MHz to 5000MHz
Output Return Loss
11.0
14.0
dB
70MHz to 5000MHz
Noise Figure
2.7
3.7
dB
500MHz
Reverse Isolation
22.0
dB
70MHz to 5000MHz
Thermal Resistance
48.8
°C/W
junction - lead
Device Operating Voltage
5.0
5.3
V
Device Operating Current
82.0
90.0
98.0
mA
Test Conditions: V
D
=5V, I
D
=90mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, T
L
=25°C, Z
S
=Z
L
=50, Tested with Bias Tees
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS130718
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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