Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236
| 参数名称 | 属性值 |
| 厂商名称 | InterFET |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| 配置 | SINGLE |
| FET 技术 | JUNCTION |
| 最大反馈电容 (Crss) | 7 pF |
| JEDEC-95代码 | TO-236 |
| JESD-30 代码 | R-PDSO-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | DEPLETION MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |

| SMP5021 | 2N5020 | 2N5021 | |
|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236 | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18 | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown | unknown | unknown |
| 配置 | SINGLE | SINGLE | SINGLE |
| FET 技术 | JUNCTION | JUNCTION | JUNCTION |
| 最大反馈电容 (Crss) | 7 pF | 7 pF | 7 pF |
| JEDEC-95代码 | TO-236 | TO-18 | TO-18 |
| JESD-30 代码 | R-PDSO-G3 | O-MBCY-W3 | O-MBCY-W3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | METAL | METAL |
| 封装形状 | RECTANGULAR | ROUND | ROUND |
| 封装形式 | SMALL OUTLINE | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | NO |
| 端子形式 | GULL WING | WIRE | WIRE |
| 端子位置 | DUAL | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 外壳连接 | - | GATE | GATE |
| 最大功率耗散 (Abs) | - | 0.3 W | 0.3 W |
| Base Number Matches | - | 1 | 1 |
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