Power Field-Effect Transistor, 40ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-236
参数名称 | 属性值 |
厂商名称 | InterFET |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknown |
配置 | SINGLE |
最大漏源导通电阻 | 40 Ω |
FET 技术 | JUNCTION |
JEDEC-95代码 | TO-236 |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | DEPLETION MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
SMP4860A | 2N4859A | 2N4857A | 2N4858A | 2N4856A | 2N4860A | 2N4861A | SMP4857A | SMP4858A | |
---|---|---|---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, 40ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-236 | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 | Power Field-Effect Transistor, 40ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-236 | Power Field-Effect Transistor, 60ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-236 |
Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最大漏源导通电阻 | 40 Ω | 25 Ω | 40 Ω | 60 Ω | 25 Ω | 40 Ω | 60 Ω | 40 Ω | 60 Ω |
FET 技术 | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
JEDEC-95代码 | TO-236 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-236 | TO-236 |
JESD-30 代码 | R-PDSO-G3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | METAL | METAL | METAL | METAL | METAL | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | NO | NO | NO | NO | NO | NO | YES | YES |
端子形式 | GULL WING | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | GULL WING | GULL WING |
端子位置 | DUAL | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | - | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
工作模式 | DEPLETION MODE | - | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | - | - | DEPLETION MODE | DEPLETION MODE |
外壳连接 | - | GATE | GATE | GATE | GATE | GATE | GATE | - | - |
功耗环境最大值 | - | 1.8 W | 1.8 W | 1.8 W | 1.8 W | 1.8 W | 1.8 W | - | - |
最大功率耗散 (Abs) | - | 0.36 W | 0.36 W | 0.36 W | 0.36 W | 0.36 W | 0.36 W | - | - |
Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
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