58A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
参数名称 | 属性值 |
厂商名称 | Microsemi |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
雪崩能效等级(Eas) | 1300 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 200 V |
最大漏极电流 (ID) | 58 A |
最大漏源导通电阻 | 0.045 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 450 pF |
JEDEC-95代码 | TO-247 |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL |
功耗环境最大值 | 360 W |
最大脉冲漏极电流 (IDM) | 232 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管元件材料 | SILICON |
最大关闭时间(toff) | 230 ns |
最大开启时间(吨) | 120 ns |
APT20M45BNR-BUTT | APT20M60BNR-BUTT | APT20M60BNR-GULLWING | APT20M45BNR-GULLWING | |
---|---|---|---|---|
描述 | 58A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | 50A, 200V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | 50A, 200V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | 58A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 1300 mJ | 1300 mJ | 1300 mJ | 1300 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V |
最大漏极电流 (ID) | 58 A | 50 A | 50 A | 58 A |
最大漏源导通电阻 | 0.045 Ω | 0.06 Ω | 0.06 Ω | 0.045 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 450 pF | 450 pF | 450 pF | 450 pF |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-G3 | R-PSFM-G3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
功耗环境最大值 | 360 W | 360 W | 360 W | 360 W |
最大脉冲漏极电流 (IDM) | 232 A | 200 A | 200 A | 232 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | YES | YES |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
最大关闭时间(toff) | 230 ns | 230 ns | 230 ns | 230 ns |
最大开启时间(吨) | 120 ns | 120 ns | 120 ns | 120 ns |
厂商名称 | Microsemi | Microsemi | Microsemi | - |
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