AP65SL190AP
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% R
g
& UIS Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
V
DS
@ T
j,max.
R
DS(ON)
I
D
3
700V
0.19Ω
20A
S
Description
AP65SL190A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-industrial
through hole applications. The low thermal resistance and low
package cost contribute to the worldwide popular package.
G
D
S
TO-220(P)
Absolute Maximum Ratings@T
j
=25 C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
dv/dt
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
dv/dt
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
3
Pulsed Drain Current
1
MOSFET dv/dt Ruggedness (V
DS
= 0 …400V )
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
4
Peak Diode Recovery dv/dt
5
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
+20
20
12.3
48
50
147
2
300
15
-55 to 150
-55 to 150
Units
V
V
A
A
A
V/ns
W
W
mJ
V/ns
℃
℃
o
.
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.85
62
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201506161
AP65SL190AP
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Starting T
j
=25
o
C , V
DD
=50V , L=150mH , R
G
=25Ω
5.I
SD
≦
I
D
, V
DD
≦
BV
DSS
, starting T
J
= 25
o
C
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
650
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
-
-
16
-
-
55
14
22
17
29
49
25
60
3
4.3
Typ.
0.8
420
3.7
Max. Units
-
0.19
5
-
100
+100
88
-
-
-
-
-
-
-
-
8.6
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=6.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7.5A
V
DS
=480V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=7.5A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=7.5A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=100V
f=1.0MHz
f=1.0MHz
Test Conditions
I
S
=6.2A, V
GS
=0V
I
S
=20A, V
GS
=0V
dI/dt=50A/µs
2200 3520
.
Source-Drain Diode
Max. Units
-
-
-
V
ns
µC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP65SL190AP
40
20
T
C
=25 C
I
D
, Drain Current (A)
30
o
I
D
, Drain Current (A)
10V
9.0V
8.0V
7.0V
T
C
=150 C
16
o
12
0.37Ω
10V
9.0V
8.0V
7.0V
V
G
=6.0V
20
V
G
=6.0V
10
8
4
0
0
8
16
24
32
0
0
8
16
24
32
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
4
I
D
=6.2A
T
C
=25 C
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
190
o
I
D
=6.2A
V
G
=10V
3
180
.
2
170
1
160
4
5
6
7
8
9
10
0
-100
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
I
D
=250uA
8
1.6
6
Normalized V
GS(th)
I
S
(A)
1.2
T
j
= 150 C
4
o
T
j
= 25 C
o
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0
-100
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP65SL190AP
12
f=1.0MHz
10000
10
I
D
=7.5A
V
DS
=480V
1000
C
iss
V
GS
, Gate to Source Voltage (V)
8
C (pF)
100
0.37Ω
C
oss
C
rss
6
10
4
1
2
0
0
20
40
60
80
0.1
0
200
400
600
800
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
10
0.2
I
D
(A)
10us
100us
0.1
1
1ms
10ms
.
0.1
0.05
0.02
0.01
Single Pulse
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
C
=25
o
C
Single Pulse
0.1
1
10
100
100ms
DC
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP65SL190AP
2
160
I
D
=1mA
1.6
P
D
, Power Dissipation(W)
-50
0
50
100
150
120
Normalized BV
DSS
1.2
80
0.8
40
0.4
0
-100
0
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
C
, Case Temperature(
o
C)
Fig 13. Normalized BV
DSS
v.s. Junction
Temperature
500
Fig 14. Total Power Dissipation
T
j
=25
o
C
400
R
DS(ON)
(m
Ω
)
300
.
V
GS
=10V
200
100
0
4
8
12
16
20
24
I
D
, Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
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