BLF888
UHF power LDMOS transistor
Rev. 5 — 21 January 2011
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 110 W
average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The
excellent ruggedness of this device makes it ideal for digital transmitter applications.
Table 1.
Application information
RF performance at V
DS
= 50 V in a common source 860 MHz narrowband test circuit unless
otherwise specified.
Mode of operation
2-Tone, class AB
DVB-T (8k OFDM)
[1]
f
(MHz)
f
1
= 860; f
2
= 860.1
858
P
L(PEP)
P
L(AV)
G
p
(W)
500
-
(W)
250
110
(dB)
19
19
D
(%)
46
31
IMD3
32
-
IMD
shldr
-
31
[1]
(dBc) (dBc)
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
2-Tone performance at 860 MHz, a drain-source voltage V
DS
of 50 V and a quiescent
drain current I
Dq
= 1.3 A:
Peak envelope power load power = 500 W
Power gain = 19 dB
Drain efficiency = 46 %
Third order intermodulation distortion =
32
dBc
DVB performance at 858 MHz, a drain-source voltage V
DS
of 50 V and a quiescent
drain current I
Dq
= 1.3 A:
Average output power = 110 W
Power gain = 19 dB
Drain efficiency = 31 %
Shoulder distance =
31
dBc (4.3 MHz from center frequency)
Integrated ESD protection
Advanced flange material for optimum thermal behavior and reliability
NXP Semiconductors
BLF888
UHF power LDMOS transistor
Excellent ruggedness
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Excellent reliability
Internal input matching for high gain and optimum broadband operation
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
1
2
5
Graphic symbol
1
3
3
4
4
5
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Name Description
BLF888
-
Version
Type number Package
flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
BLF888
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
104
+11
+150
200
Unit
V
V
C
C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
2 of 17
NXP Semiconductors
BLF888
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L(AV)
= 110 W
[1]
Typ
0.24
Unit
K/W
R
th(j-c)
is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
iss
C
oss
C
rss
[1]
[2]
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
Conditions
V
GS
= 0 V; I
D
= 2.7 mA
V
DS
= 10 V; I
D
= 270 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V; V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 13.5 A
V
GS
= V
GS(th)
+ 3.75 V; I
D
= 9.5 A
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz
[1]
[1]
[2]
[2]
[2]
[1]
[1]
Min
104
1.4
-
-
-
-
-
-
-
-
Typ
-
1.9
-
43
-
17
105
205
65
2.2
Max
-
2.4
2.8
-
280
-
-
-
-
-
Unit
V
V
A
A
nA
S
m
pF
pF
pF
I
D
is the drain current.
Capacitance values without internal matching.
Table 7.
RF characteristics
T
h
= 25
C unless otherwise specified.
Symbol
V
DS
I
Dq
P
L(PEP)
P
L(AV)
G
p
D
IMD3
V
DS
I
Dq
P
L(AV)
G
p
Parameter
drain-source voltage
quiescent drain current
peak envelope power load power
average output power
power gain
drain efficiency
third-order intermodulation distortion
drain-source voltage
quiescent drain current
average output power
power gain
total device
total device
Conditions
Min
-
-
500
250
18
42
-
-
-
110
18
Typ
50
1.3
-
-
19
46
32
50
1.3
-
19
Max
-
-
-
-
-
-
28
-
-
-
-
Unit
V
A
W
W
dB
%
dBc
V
A
W
dB
2-Tone, class AB
DVB-T (8k OFDM)
BLF888
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
3 of 17
NXP Semiconductors
BLF888
UHF power LDMOS transistor
Table 7.
RF characteristics
…continued
T
h
= 25
C unless otherwise specified.
Symbol
D
IMD
shldr
PAR
[1]
[2]
Parameter
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
Conditions
[1]
[2]
Min
28
-
-
Typ
31
31
8.3
Max
-
28
-
Unit
%
dBc
dB
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
250
C
oss
(pF)
200
001aaj274
150
100
50
0
20
40
V
DS
(V)
60
V
GS
= 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section; capacitance value without internal matching
6.1 Ruggedness in class-AB operation
The BLF888 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: V
DS
= 50 V; f = 860 MHz at rated
power. Ruggedness is measured in the application circuit as described in
Section 8.
BLF888
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
4 of 17
NXP Semiconductors
BLF888
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
001aak641
001aak642
22
G
p
(dB)
20
60
η
D
(%)
22
G
p
(dB)
20
0
IMD3
(dBc)
−10
G
p
50
G
p
18
40
18
−20
16
η
D
30
16
IMD3
−30
14
20
14
−40
12
10
12
−50
10
0
100
200
300
P
L
(W)
0
400
10
0
100
200
300
P
L
(W)
−60
400
V
DS
= 50 V; I
Dq
= 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
V
DS
= 50 V; I
Dq
= 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 2.
2-Tone power gain and drain efficiency as
function of load power; typical values
Fig 3.
2-Tone power gain and third order
intermodulation distortion as function of
load power; typical values
BLF888
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2011
5 of 17
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