DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ270
NPN 6 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
FEATURES
•
High power gain
•
Emitter-ballasting resistors for
good thermal stability
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon NPN transistor mounted in a
4-lead dual-emitter SOT172A1.
envelope with a ceramic cap. All
leads are isolated from the mounting
base.
It is primarily intended for use in
MATV and CATV amplifiers.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
V
O
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
output voltage
up to T
c
= 100
°C
I
C
= 240 mA; V
CE
= 18 V; T
j
= 25
°C
I
C
= 240 mA; V
CE
= 18 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 240 mA; V
CE
= 18 V;
f = 800 MHz; T
amb
= 25
°C
d
im
=
−60
dB; I
C
= 240 mA;
V
CE
= 18 V; R
L
= 75
Ω;
f
(p+q-r)
= 793.25 MHz
WARNING
Product and environmental safety - toxic materials
open base
CONDITIONS
open emitter
PINNING
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
1
page
BFQ270
4
3
2
Top view
MBC869
Fig.1 SOT172A1.
MIN. TYP. MAX. UNIT
−
−
−
−
60
−
−
−
−
−
−
−
−
6
10
1.6
25
19
500
10
−
−
−
−
GHz
dB
V
V
V
mA
W
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
c
= 100
°C
open emitter
open base
open collector
CONDITIONS
MIN.
−
−
−
−
−
−65
−
BFQ270
MAX.
25
19
2
500
10
150
200
UNIT
V
V
V
mA
W
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-c
PARAMETER
thermal resistance from junction to case
THERMAL RESISTANCE
10 K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
C
cs
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
collector-stud capacitance
transition frequency
maximum unilateral power gain
(note 1)
I
C
= 240 mA; V
CE
= 18 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 240 mA; V
CE
= 18 V;
f = 500 MHz; T
amb
= 25
°C
I
C
= 240 mA; V
CE
= 18 V; f = 1 GHz;
T
amb
= 25
°C
V
O
d
2
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
2. d
im
=
−60
dB (DIN 45004); I
C
= 240 mA; V
CE
= 18 V; R
L
= 75
Ω;
V
p
= V
O
; f
p
= 795.25 MHz;
V
q
= V
O
−6
dB; f
q
= 803.25 MHz;
V
r
= V
O
−6
dB; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz.
3. I
C
= 240 mA; V
CE
= 18 V; R
L
= 75
Ω;
V
p
= V
q
= V
O
= 50.5 dBmV = 335 mV;
f
(p+q)
= 810 MHz; f
p
= 250 MHz; f
q
= 560 MHz.
September 1995
3
output voltage
second order intermodulation
distortion
note 2
note 3
CONDITIONS
I
E
= 0; V
CB
= 18 V
I
C
= 240 mA; V
CE
= 18 V
I
E
= i
e
= 0; V
CB
= 18 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 18 V; f = 1 MHz
MIN. TYP. MAX.
−
60
−
−
2
−
4.5
−
−
−
−
−
110
3.6
11
2.6
1.2
6
16
10
1.6
−50
100
−
−
−
−
−
−
−
−
−
−
pF
pF
pF
pF
GHz
dB
dB
V
dB
UNIT
µA
S
21
- ˙
=
10 log
-------------------------------------------------------------
dB
2
2
1
–
S
11
1
–
S
22
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
handbook, full pagewidth
input
n–75
Ω
,
,,,
,,
V bias
L1
VCC
(1)
C4
R5
C8
C9
C7
L4
L2
R6
L3
L5
C5
L6
L1
C2
L2
DUT
C6
C1
C3
R1
R2
R3
R4
MBB488
BFQ270
output
n–75
Ω
(1)
+V
c
is equivalent to V
CE
= V
c
−
I
c
(A)
×
17.
Fig.2 Intermodulation and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
C1
C2, C5, C7, C8
C3
C4 (note 1)
C6
C9
L1 (note 1)
L2
ML1, ML6
ML2, ML5
ML3, ML4
R1, R2, R3, R4
R5 (note 1)
R6
Note
1. Components C4, L1, and R5 are mounted in a cavity in the brass ground plate.
The circuit is constructed on a printed circuit board and 10 mm thick brass ground plate, with a relative dielectric constant
of (ε
r
= 2.2), thickness 1.57 mm; thickness of copper 0.017 mm (E.G. Rogers’ RT/Duroid 5880).
September 1995
4
DESCRIPTION
miniature ceramic plate capacitor
multilayer ceramic capacitor
multilayer ceramic chip capacitor
miniature ceramic plate capacitor
miniature ceramic plate capacitor
electrolytic capacitor
4.5 turns loosely wound 0.4 mm
enamelled copper wire
Ferroxcube choke
microstripline
microstripline
microstripline
metal film resistor
metal film resistor
metal film resistor
VALUE
0.82 pF
10 nF
2.2 pF
1 nF
1.2 pF
4.7
µF
≈35
nH
5
µH
75
Ω
75
Ω
145
Ω
68
Ω
240
Ω
10 kΩ
width 2.46 mm;
length 9 mm
width 2.46 mm;
length 22 mm
width 0.5 mm;
length 12 mm
type MR25
type SFR16T
type SFR16T
2322 151 76819
2322 180 73241
2322 180 73103
internal coil diameter
2 mm
3122 108 20153
DIMENSIONS
CATALOGUE NO.
2222 680 03827
2222 852 47103
2222 855 12228
2222 630 08102
2222 680 03128
2222 014 28478
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
Vbias
C7
R5
R3
C4
L3
L2
C2
C1
C3
L4
L5
L1
R4
C9
VCC
C8
R6
L2
input
n–75
Ω
L1
L6
C5
C6
output
n–75
Ω
R1
R2
MBB487
handbook, full pagewidth
80 mm
copper straps
70 mm
mounting screw
(4 x M2.5)
MBB486
Fig.3 Intermodulation test circuit printed circuit board.
September 1995
5
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