Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.0
4.0
0.35
0.17
MAX.
1500
800
8
15
45
3.0
-
-
0.48
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
T
hs
≤
25 ˚C
I
C
= 5.0 A; I
B
= 1.25 A
f = 16kHz
f = 64kHz
I
Csat
= 5A; f = 16kHz
I
Csat
= 4A; f = 64kHz
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
May 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
CONDITIONS
MIN.
-
-
-
7.5
800
-
0.85
-
4.2
TYP.
-
-
-
13.5
-
-
0.94
12
5.7
MAX.
1.0
2.0
100
-
-
3.0
1.03
-
7.3
UNIT
mA
mA
µA
V
V
V
V
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
Emitter cut-off current
V
EB
= 6.0 V; I
C
= 0 A
Emitter-base breakdown voltage
I
B
= 1 mA
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
Collector-emitter saturation voltages I
C
= 5.0 A; I
B
= 1.25 A
Base-emitter saturation voltage
I
C
= 5.0 A; I
B
= 1.25 A
DC current gain
I
C
= 100 mA; V
CE
= 5 V
I
C
= 5.0 A; V
CE
= 5 V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
C
c
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (64 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
I
Csat
= 4.0 A;I
B1
= 0.8 A
(I
B2
= -2.0 A)
1.9
0.17
-
-
µs
µs
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 5.0 A;I
B1
= 1.0 A
(I
B2
= -2.5 A)
3.2
0.35
4.3
0.48
µs
µs
TYP.
80
MAX.
-
UNIT
pF
2
Measured with half sine-wave voltage (curve tracer).
May 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AX
ICsat
+ 50v
100-200R
IC
90 %
Horizontal
tf
10 %
Oscilloscope
IB
t
ts
IB1
Vertical
100R
6V
30-60 Hz
1R
t
- IB2
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICsat
Lc
250
200
100
IBend
LB
T.U.T.
Cfb
0
VCE / V
min
VCEOsust
-VBB
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Switching times test circuit.
TRANSISTOR
IC
DIODE
ICsat
100
hFE
Ths = 25 C
Ths = 85 C
VCE = 1V
t
IB
IB1
t
20us
26us
64us
IB2
10
VCE
1
0.001
t
0.01
0.1
1
IC / A
10
Fig.3. Switching times waveforms (16 kHz).
Fig.6. High and low DC current gain.
May 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AX
100
hFE
10
VCE = 5V
Ths = 25 C
Ths = 85 C
ts/tf / us
ICsat = 5 A
Ths = 85 C
Freq = 16 kHz
8
6
10
ts
4
2
tf
1
0.001
0.01
0.1
1
IC / A
10
0
0
0.5
1
1.5
2
2.5
IB / A
3
Fig.7. High and low DC current gain.
Fig.10. Typical collector storage and fall time.
I
C
=5 A; T
j
= 85˚C; f = 16kHz
Normalised Power Derating
with heatsink compound
10
VCEsat / V
BU4508AF/X/Z
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Ths = 25 C
Ths = 85 C
1
0.1
IC/IB = 5
0.01
0.1
0
1
10
IC / A
100
20
40
60
80
Ths / C
100
120
140
Fig.8. Typical collector-emitter saturation voltage.
Fig.11. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
Zth K/W
10
1.2
VBEsat / V
BU4508AF/X/Z
Ths = 25 C
Ths = 85 C
BU4508AF
1.1
IC = 5 A
0.5
1
0.2
0.1
0.05
0.1
0.02
1
0.9
0.8
IC = 4 A
0.01
P
D
t
p
D=
t
p
T
t
1.0E+01
0.7
0
T
1.0E-05
1.0E-03
1.0E-01
0.6
0.001
1.0E-07
0
0.5
1
1.5
2
2.5
IB / A
3
t/s
Fig.9. Typical base-emitter saturation voltage.
Fig.12. Transient thermal impedance.
May 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AX
10
Ic(sat) (A)
8
6
4
2
0
0
20
40
60
Frequency (kHz)
80
100
Fig.13. I
Csat
during normal running vs. frequency of
operation for optimum performance
May 1998
5
Rev 1.000
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