DISCRETE SEMICONDUCTORS
DATA SHEET
BU4508AF
Silicon Diffused Power Transistor
Product specification
Supersedes data of January 1998
File under Discrete Semiconductors, SC06
June 1998
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.0
4.0
0.35
0.17
MAX.
1500
800
8
15
45
3.0
-
-
0.48
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
T
hs
≤
25 ˚C
I
C
= 5.0 A; I
B
= 1.25 A
f = 16kHz
f = 64kHz
I
Csat
= 5A; f = 16kHz
I
Csat
= 4A; f = 64kHz
PINNING - SOT199
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
June 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
CONDITIONS
MIN.
-
-
-
7.5
800
-
0.85
-
4.2
TYP.
-
-
-
13.5
-
-
0.94
12
5.7
MAX.
1.0
2.0
100
-
-
3.0
1.03
-
7.3
UNIT
mA
mA
uA
V
V
V
V
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
Emitter cut-off current
V
EB
= 6.0 V; I
C
= 0 A
Emitter-base breakdown voltage
I
B
= 1 mA
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
Collector-emitter saturation voltages I
C
= 5.0 A; I
B
= 1.25 A
Base-emitter saturation voltage
I
C
= 5.0 A; I
B
= 1.25 A
DC current gain
I
C
= 100 mA; V
CE
= 5 V
I
C
= 5.0 A; V
CE
= 5 V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
C
c
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (64 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
I
Csat
= 4 A; I
B1
= 0.8 A;(I
B2
= -2.0 A)
1.9
0.17
-
-
µs
µs
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 5.0 A; I
B1
= 1.0 A;(I
B2
= -2.5 A)
3.2
0.35
4.3
0.48
µs
µs
TYP.
80
MAX.
-
UNIT
pF
t
s
t
f
t
s
t
f
2
Measured with half sine-wave voltage (curve tracer).
June 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AF
ICsat
+ 50v
100-200R
IC
90 %
Horizontal
tf
10 %
Oscilloscope
IB
t
ts
IB1
Vertical
100R
6V
30-60 Hz
1R
t
- IB2
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICsat
Lc
250
200
100
IBend
LB
T.U.T.
Cfb
0
VCE / V
min
VCEOsust
-VBB
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Switching times test circuit.
TRANSISTOR
IC
DIODE
ICsat
100
hFE
Ths = 25 C
Ths = 85 C
VCE = 1V
t
IB
IB1
t
20us
26us
64us
IB2
10
VCE
1
0.001
t
0.01
0.1
1
IC / A
10
Fig.3. Switching times waveforms (16 kHz).
Fig.6. High and low DC current gain.
June 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508AF
100
hFE
10
VCE = 5V
Ths = 25 C
Ths = 85 C
ts/tf / us
ICsat = 5 A
Ths = 85 C
Freq = 16 kHz
8
6
10
ts
4
2
tf
1
0.001
0.01
0.1
1
IC / A
10
0
0
0.5
1
1.5
2
2.5
IB / A
3
Fig.7. High and low DC current gain.
Fig.10. Typical collector storage and fall time.
I
C
=5 A; T
j
= 85˚C; f = 16kHz
Normalised Power Derating
with heatsink compound
10
VCEsat / V
BU4508AF/X/Z
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Ths = 25 C
Ths = 85 C
1
0.1
IC/IB = 5
0.01
0.1
0
1
10
IC / A
100
20
40
60
80
Ths / C
100
120
140
Fig.8. Typical collector-emitter saturation voltage.
Fig.11. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
Zth K/W
10
1.2
VBEsat / V
BU4508AF/X/Z
Ths = 25 C
Ths = 85 C
BU4508AF
1.1
IC = 5 A
0.5
1
0.2
0.1
0.05
0.1
0.02
1
0.9
0.8
IC = 4 A
0.01
P
D
t
p
D=
t
p
T
t
1.0E+01
0.7
0
T
1.0E-05
1.0E-03
1.0E-01
0.6
0.001
1.0E-07
0
0.5
1
1.5
2
2.5
IB / A
3
t/s
Fig.9. Typical base-emitter saturation voltage.
Fig.12. Transient thermal impedance.
June 1998
4
Rev 1.000
微控制器 MCU
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