SUF-5033Low

Noise, High

Gain SiGe HBT

SUF-5033

0.1GHZ TO 4.0GHZ, CASCADABLE PHEMT

MMIC AMPLIFIER

Package: QFN, 16-Pin, 3mmx3mm

Product Description

The SUF-5033 is a monolithically matched broadband high IP3 gain block

covering 0.1GHz to 4.0GHz. This pHEMT FET-based amplifier uses a pat-

ented self-bias Darlington topology featuring a gain and temperature com-

pensating active bias network that operates from a single 5V supply. It

offers efficient, cascadable performance in a compact 3mmx3mm

Ceramic QFN package. It is well-suited for RF, LO, and IF driver applica-

tions.

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

LDMOS

GaAs MESFET

Features



30

20

10

0

-10

-20

-30

0.0

Gain and Return Loss versus Frequency

(V

DD

=5V)

IRL

Gain

ORL



Gain and Return Loss (dB)



Broadband Performance

High Gain=18.5dB at 2GHz

P1dB=20.5dBm at 2GHz

50 I/O Low-Noise, Efficient

Gain Block

5V Operation, No Dropping

Resistor

Low Gain Variation versus

Temperature

Patented Self-Bias Darlington

Circuit

Broadband Communications

Test Instrumentation

Military and Space

LO and IF Mixer Applications

High IP3 RF Driver Applica-

tions

Condition

Applications



0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0





Frequency (GHz)

Parameter

Frequency of Operation

Small Signal Power Gain

Min.

0.1

16.0

Specification

Typ.

Max.

4.0

Unit

GHz

18.5

dB

2GHz

16.0

dB

4GHz

Output Power at 1dB Compression

21.0

dBm

2GHz

21.5

dBm

4GHz

Output Third Order Intercept Point

27.6

dBm

2GHz

27.9

dBm

4GHz

Noise Figure

3.6

dB

2GHz

4.0

dB

4GHz

Input Return Loss

-10.3

dB

2GHz

-11.1

dB

4GHz

Output Return Loss

-19.0

dB

2GHz

-23.8

dB

4GHz

Reverse Isolation

-24.0

dB

2GHz

-23.0

dB

4GHz

Device Operating Voltage

5.0

V

Device Operating Current

90

mA

Gain Variation vs. Temperature

-0.01

dB/°C

Thermal Resistance

100

°C/W

junction to backside

Test Conditions: V=5V, I

D

=90mA OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, Z

S

=Z

L

=50, 25°C, With Bias Tees

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Rev A1 DS091109

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SUF-5033

Absolute Maximum Ratings

Parameter

Max Device Current (l

D

)

Max Device Voltage (V

D

)

Max RF Input Power

Max Dissipated Power

Max Junction Temperature (T

J

)

Operating Temperature Range (T

L

)

Max Storage Temperature

Rating

110

5.5

20

605

150

-40 to + 85

-65 to +150

Unit

mA

V

dBm

mW

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l and T

L

=Backside of die

Typical Performance (Circuit Board Data with Bias Tees) V

S

=5V, T=25°C, Z=50

Parameter

Units

dB

dBm

dB

200MHz

20.1

21.2

16.6

16.9

24.6

500MHz

19.9

21.4

16.0

17.5

24.6

1GHz

19.6

28.5

21.5

14.0

18.7

24.6

3.0

2GHz

18.5

27.6

21.0

10.3

19.0

24.5

3.6

4GHz

16.2

27.9

21.5

11.1

23.8

23.2

4.0

Small SIgnal Gain

Output 3rd Order Intercept Point (see note 1)

Output Power at 1dB Compression

Input Return Loss

Output Return Loss

Reverse Isolation

Noise Figure

Note 1: 0dBm/tone, 1MHz tone spacing

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Rev A1 DS091109

SUF-5033

Typical Performance

35

30

OIP3 versus Frequency

at P

O

=0dBm/Tone (1MHz Tone Spacing)

Noise Figure versus Frequency

8

7

6

5

4

3

2

20

15

10

5

0

1

2

3

4

Noise Figure (dB)

25

OIP3 (dB)

25°C

-40°C

85°C

1

0

1.0

1.5

2.0

2.5

3.0

3.5

25°C

85°C

-40°C

4.0

Frequency (GHz)

P1dB versus Frequency

25

20

P1dB (dBm)

15

10

5

-40°C

25°C

85°C

0

1

2

3

4

0

Frequency (GHz)

Rev A1 DS091109

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SUF-5033

Typical Performance

S11 versus Frequency

0

-5

-10

25

S21 versus Frequency

20

S11 (dB)

-15

-20

-25

-30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

S21 (dB)

-40°C

25°C

85°C

15

10

5

-40°C

25°C

85°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

Frequency (GHz)

S12 versus Frequency

0

-5

-10

0

-5

-10

-15

S22 versus Frequency

S12 (dB)

S22 dB

-40°C

25°C

85°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-15

-20

-25

-30

-35

-20

-25

-30

-35

-40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40°C

25°C

85°C

3.5

4.0

Frequency (GHz)

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Rev A1 DS091109

SUF-5033

Function

Description

This pad is DC coupled and matched to 50. An external DC block is required.

2

RFIN

11

RFOUT/BIAS

This pad is DC coupled and matched to 50. Bias is applied through this pad.

Package bottom must be connected to RF/DC ground.

Pkg

GND

Bottom

Package Drawing

Notes:

1. All dimensions in millimeters.

2. Backside is ground.

PCB Stencil Drawing

Rev A1 DS091109

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 6

参数名称	属性值
是否Rohs认证	符合
厂商名称	Qorvo
包装说明	LCC16,.12SQ,20
Reach Compliance Code	unknown
安装特点	SURFACE MOUNT
功能数量	1
端子数量	16
最高工作温度	85 °C
最低工作温度	-40 °C
封装主体材料	PLASTIC/EPOXY
封装等效代码	LCC16,.12SQ,20
电源	5 V
表面贴装	YES
技术	GAAS

SUF-5033SR

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