The SGA0363Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
25
20
15
Features
DC to 5000MHz Operation
Single Voltage Supply
Low Current Draw: 11mA at
2.5V Typ.
High Output Intercept:
14dBm Typ. at 1950MHz
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Applications
Small Signal Gain vs. Frequency
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
dB
10
5
0
0
1
2
3
4
5
6
Frequency GHz
Parameter
Output Power at 1dB Compression
Min.
Specification
Typ.
2.3
2.3
1.6
14.2
14.0
13.1
19.6
17.2
16.2
5000
1.8:1
1.7:1
24.0
22.8
22.1
3.0
Max.
Unit
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
DC to 4500MHz
DC to 4500MHz
850MHz
1950MHz
2400MHz
1950MHz
Condition
Third Order Intercept Point
Small Signal Gain
3dB Bandwidth
Input VSWR
Output VSWR
Reverse Isolation
Noise Figure
[1]
Device Operating Voltage
2.5
V
Device Operating Current
9
11
13
mA
Thermal Resistance
255
°C/W
junction - lead
Test Conditions: V
S
=5V, I
D
=11mA Typ., T
L
=25°C. OIP3 Tone Spacing=1MHz, P
OUT
per tone=-12dBm, R
BIAS
=220, Z
S
=Z
L
=50
dB
dB
dB
dB
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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