SRAM Module, 256KX8, 45ns, Hybrid, CDIP32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Hybrid Memory Products Ltd |
| 包装说明 | DIP, DIP32,.1 |
| Reach Compliance Code | unknown |
| 最长访问时间 | 45 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XDIP-T32 |
| 内存密度 | 2097152 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 8 |
| 端子数量 | 32 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 256KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP32,.1 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.0006 A |
| 最小待机电流 | 2 V |
| 最大压摆率 | 0.24 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | HYBRID |
| 温度等级 | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| MSM8256VLI45 | MSM8256V55 | MSM8256VLMB55 | MSM8256VMB35 | MSM8256VM45 | MSM8256SLM45 | MSM8256SLI55 | MSM8256SLM35 | MSM8256VLI35 | MSM8256S35 | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 256KX8, 45ns, Hybrid, CDIP32 | SRAM Module, 256KX8, 55ns, Hybrid, CDIP32 | SRAM Module, 256KX8, 55ns, Hybrid, CDIP32 | SRAM Module, 256KX8, 35ns, Hybrid, CDIP32 | SRAM Module, 256KX8, 45ns, Hybrid, CDIP32 | SRAM Module, 256KX8, 45ns, Hybrid, CDIP32 | SRAM Module, 256KX8, 55ns, Hybrid, CDIP32 | SRAM Module, 256KX8, 35ns, Hybrid, CDIP32 | SRAM Module, 256KX8, 35ns, Hybrid, CDIP32 | SRAM Module, 256KX8, 35ns, Hybrid, CDIP32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIP, DIP32,.1 | DIP, DIP32,.1 | DIP, DIP32,.1 | DIP, DIP32,.1 | DIP, DIP32,.1 | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.1 | DIP, DIP32,.6 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 最长访问时间 | 45 ns | 55 ns | 55 ns | 35 ns | 45 ns | 45 ns | 55 ns | 35 ns | 35 ns | 35 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 | R-XDIP-T32 |
| 内存密度 | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 70 °C | 125 °C | 125 °C | 125 °C | 125 °C | 85 °C | 125 °C | 85 °C | 70 °C |
| 最低工作温度 | -40 °C | - | -55 °C | -55 °C | -55 °C | -55 °C | -40 °C | -55 °C | -40 °C | - |
| 组织 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 | 256KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP32,.1 | DIP32,.1 | DIP32,.1 | DIP32,.1 | DIP32,.1 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.1 | DIP32,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.0006 A | 0.004 A | 0.0006 A | 0.004 A | 0.004 A | 0.0006 A | 0.0006 A | 0.0006 A | 0.0006 A | 0.004 A |
| 最小待机电流 | 2 V | 4.5 V | 2 V | 4.5 V | 4.5 V | 2 V | 2 V | 2 V | 2 V | 4.5 V |
| 最大压摆率 | 0.24 mA | 0.24 mA | 0.24 mA | 0.24 mA | 0.24 mA | 0.24 mA | 0.24 mA | 0.24 mA | 0.24 mA | 0.24 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | HYBRID | HYBRID | HYBRID | HYBRID | HYBRID | HYBRID | HYBRID | HYBRID | HYBRID | HYBRID |
| 温度等级 | INDUSTRIAL | COMMERCIAL | MILITARY | MILITARY | MILITARY | MILITARY | INDUSTRIAL | MILITARY | INDUSTRIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 厂商名称 | Hybrid Memory Products Ltd | Hybrid Memory Products Ltd | Hybrid Memory Products Ltd | - | Hybrid Memory Products Ltd | Hybrid Memory Products Ltd | Hybrid Memory Products Ltd | Hybrid Memory Products Ltd | Hybrid Memory Products Ltd | Hybrid Memory Products Ltd |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved