GTZ Series
for ESD Protection
New Product
Vishay Semiconductors
formerly General Semiconductor
V
Z
Range
5.1 to 10V
Power Dissipation
200mW
Zener Diodes
SOD-323
Mounting Pad Layout
.012 (0.3)
Cathode Band
.112 (2.85)
.100 (2.55)
.076 (1.95)
.065 (1.65)
Dimensions in inches
and (millimeters)
.059 (1.5)
.004 (0.1)
max.
.043 (1.1)
.049 (1.25)
max.
.010 (0.25)
min.
Mechanical Data
Case:
SOD-323 Plastic Package
Weight:
Approx. 0.004g
Marking Codes:
See table on next page
Packaging Codes/Options:
D5/10K per 13” reel (8mm tape)
D6/3K per 7” reel (8mm tape)
.006 (0.15)
max.
Features
•
•
•
•
•
•
Silicon Planar Power Zener Diodes
Low Zener impedence and low leakage current
Popular in Asian designs
Compact surface mount device
Ideal for automated mounting
Complies with IEC 61000-4-2 for ESD protection
Maximum Ratings and Thermal Characteristics
(T
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Pd
T
j
T
stg
A
= 25°C unless otherwise noted)
Value
200
150
–55 to + 150
Unit
mW
°C
°C
Document Number 88351
20-May-02
www.vishay.com
1
0.047 (1.20)
Top View
0.055
(1.40)
0.062
(1.60)
GTZ Series
for ESD Protection
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Type
GTZ5.1
GTZ5.6
GTZ6.2
GTZ6.8
GTZ7.5
GTZ8.2
GTZ9.1
GTZ10
Marking
Code
G1
G2
G3
G4
G5
G6
G7
G8
(T
A
= 25°C unless otherwise noted)
Zener Voltage
V
Z
(V)
(1)
min
max
4.84
5.31
5.86
6.47
7.06
7.76
8.56
9.45
5.37
5.92
6.53
7.14
7.84
8.64
9.55
10.55
I
ZT
(mA)
5
5
5
5
5
5
5
5
Reverse Current
I
R(max)
(µA)
5
5
2
2
2
2
2
2
V
RT
(V)
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
Dynamic Resistance
r
d(max)
(
Ω
)
130
80
50
30
30
30
30
30
I
ZT
(mA)
5
5
5
5
5
5
5
5
ESD-
Capability
(2)
(kV) (min)
30
30
30
30
30
30
30
30
Notes:
(1) Tested with pulse (PW = 40ms).
(2) C = 150pF, R = 330 ohms, Both forward and reverse direction 10 pulse (contact mode)
www.vishay.com
2
Document Number 88351
20-May-02
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