PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain
NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP
3
= 22 dBm (V67), OIP
3
= 23 dBm (V68) typ. at f = 2 GHz
NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz
4 pins super mini mold package
Wg = 800
µ
m
ORDERING INFORMATION (PLAN)
Part Number
NE38018-T1
Quantity
3 kpcs/Reel.
Packing Style
Embossed tape 8 mm wide.
Pin3 (Source), Pin4 (Drain) face to perforation side of the tape.
NE38018-T2
3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Source), Pin2 (Gate) face to perforation side of the tape.
Remark
Please contact with responsible NEC person, if you require evaluation sample.
(Part number for sample order: NE38018)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Temperature
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
Ratings
4.0
–3.0
I
DSS
100
150
125
–65 to +125
Unit
V
V
mA
µ
A
mA
°C
°C
RECOMMENDED OPERATING CONDITIONS (T
A
= 25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
1
2
–
TYP.
2
5
–
MAX.
3
30
0
Unit
V
mA
dBm
The information in this document is subject to change without notice.
Document No. P13494EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
©
1998
NE38018
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Power Gain
Output Power at 1 dB Gain
Compression Point
Output Third-Order Distortion
Intercept Point
OIP
3
Symbol
I
GSO
I
DSS
V
GS(off)
g
m
NF
Ga
Gs
P
0(1 dB)
V
DS
= 3 V I
DS
= 30 mA
f = 2 GHz
V
DS
= 2 V I
DS
= 5 mA
f = 2 GHz
Test Conditions
V
GS
= –3 V
V
DS
= 2 V V
GS
= 0 V
V
DS
= 2 V I
DS
= 100
µ
A
V
DS
= 2 V I
DS
= 5 mA
V
DS
= 2 V I
DS
= 5 mA
f = 2 GHz
MIN.
–
40
–0.1
50
–
12.5
–
–
–
–
–
TYP.
1.0
–
–
–
0.55
14.5
16
17 (V67)
18 (V68)
22 (V67)
23 (V68)
MAX.
20
170
–1.5
–
1.0
–
–
–
dBm
–
–
dBm
–
Unit
µ
A
mA
V
mS
dB
dB
dB
I
DSS
CLASSIFICATIONS
Rank
67
68
I
DSS
(mA)
40 to 90
70 to 170
Marking
V67
V68
DIMENSIONS (Unit: mm)
2.1±0.2
1.25±0.1
0.3
+0.1
–0.05
3
0.3
+0.1
–0.05
0.3
+0.1
–0.05
0.15
+0.1
–0.05
2.0±0.2
0.65
2
V67
(1.25)
0.60
0.4
+0.1
–0.05
1
0.9±0.1
0.3
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
Preliminary Data Sheet
2
0 to 0.1
4
(1.3)
NE38018
TYPICAL CHARACTERISTICS (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
100
P
tot
- Total Power Dissipation - mW
200
I
D
- Drain Current - mA
80
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 0 V
150
60
–0.2 V
100
40
–0.4 V
20
–0.6 V
50
0
50
100
150
200
0
1
2
3
4
5
T
A
- Ambient Temperature -˚C
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
V
DS
= 2 V
80
I
D
- Drain Current - mA
NF - Noise Figure - dB
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–2.0
–1.0
V
GS
- Gate to Source Voltage - V
0
0
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
20
V
DS
= 2 V
f = 2 GHz
18
G
a
16
14
12
10
8
6
NF
4
2
5
10
15
20
25
0
30
G
a
- Associated Gain - dB
60
40
20
I
D
- Drain Current - mA
Preliminary Data Sheet
3
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