DATA SHEET
NPN SILICON RF TRANSISTOR
NE687M33
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN SUPER LEAD-LESS MINIMOLD (M33)
FEATURES
• Low noise
NF = 1.5 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• 3-pin super lead-less minimold (M33) package
ORDERING INFORMATION
Part Number
NE687M33
NE687M33-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
5.0
3.0
2.0
30
90
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10342EJ02V0DS (2nd edition)
Date Published August 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
© NEC Compound Semiconductor Devices 2003
NE687M33
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 10 mA
–
–
70
–
–
110
100
100
140
nA
nA
–
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
C
= 0 mA, f = 1 MHz
10
7
–
–
12
9
1.5
0.4
–
–
2.0
0.7
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
W2
70 to 140
2
Data Sheet PU10342EJ02V0DS
NE687M33
TYPICAL CHARACTERISTICS (T
A
= +25°C ,unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
250
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
0.6
f = 1 MHz
0.5
0.4
0.3
0.2
0.1
200
150
100
90
50
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
0.0001
0.4
V
CE
= 1 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
0.0001
0.4
V
CE
= 2 V
Collector Current I
C
(mA)
0.5
0.6
0.7
0.8
0.9
1.0
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
Collector Current I
C
(mA)
30
25
20
15
10
5
0
500
µ
A
450
µ
A 400
µ
A
350
µ
A
300
µ
A
250
µ
A
200
µ
A
150
µ
A
100
µ
A
I
B
= 50
µ
A
1
2
3
4
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10342EJ02V0DS
3
NE687M33
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
V
CE
= 2 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
100
DC Current Gain h
FE
100
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10342EJ02V0DS
NE687M33
PACKAGE DIMENSIONS
3-PIN SUPER LEAD-LESS MINIMOLD (M33) (UNIT: mm)
0.64±0.05
0.44±0.05
(Bottom View)
0.285
0.84±0.05
2
W2
1. Emitter
2. Base
3. Collector
0.57
3
0.125
0.125
0.15
0.15
0.4
0.11
NE package code: M33
SOT number: –
PIN CONNECTIONS
0.15
1
Data Sheet PU10342EJ02V0DS
5
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