NPN SILICON RF TRANSISTOR
NE68718
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
FEATURES
• Low Noise
NF = 1.3 dB TYP. @ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• 4-pin super minimold Package
ORDERING INFORMATION
Part Number
NE68718-A
NE68718-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
5
3
2
30
90
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10516EJ01V0DS (1st edition)
(Previous No. P12109EJ2V0DS00)
Date Published August 2004 CP(K)
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 1994 , 2004
NE68718
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
f
T
f
T
⏐S
21e
⏐
⏐S
21e
⏐
NF
NF
C
re
Note 2
2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 20 mA
−
−
70
−
−
−
100
100
140
nA
nA
−
V
CE
= 2 V, I
C
= 20 mA, f = 2.0 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2.0 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2.0 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2.0 GHz
V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
V
CB
= 2 V, I
E
= 0 mA, f = 1.0 MHz
10
8.0
8.0
7.5
−
−
−
13
11
11
9.0
1.3
1.3
0.3
−
−
−
−
2.0
2.0
0.6
GHz
GHz
dB
dB
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
T86
70 to 140
2
Data Sheet PU10516EJ01V0DS
NE68718
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.6
f = 1 MHz
Free Air
200
0.5
0.4
100
90 mW
0.3
0.2
0
1.0
2.0
3.0
4.0
5.0
Collector to Base Voltage V
CB
(V)
0
50
100
150
Ambient Temperature T
A
(˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 2 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
Collector Current I
C
(mA)
40
30
15
20
10
5
10
200
μ
A
180
μ
A
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
I
B
= 20
μ
A
1.0
2.0
3.0
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
0
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
14
V
CE
= 2 V
12
10
8
6
4
2
1
2
5
10
20 30
100
V
CE
= 1 V
f = 2 GHz
DC Current Gain h
FE
200
V
CE
= 2 V
100
50
V
CE
= 1 V
20
10
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10516EJ01V0DS
3
NE68718
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
14
Insertion Power Gain |S
21e
|
2
(dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
4
f = 2 GHz
Noise Figure NF (dB)
f = 2 GHz
3
12
V
CE
= 2 V
V
CE
= 1 V
8
10
V
CE
= 1 V
2
V
CE
= 2 V
1
6
4
1
2
5
10
20 30
100
Collector Current I
C
(mA)
0
1
2
5
10
20
100
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10516EJ01V0DS
NE68718
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.2
1.25±0.1
0.3
+0.1
–0.05
0.3
+0.1
–0.05
0.65
4
0.15
+0.1
–0.05
0.3
+0.1
–0.05
0.65
1.30
2
0.65
2.0±0.2
1.25
0.60
0.9±0.1
0.3
0.4
+0.1
–0.05
1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
0 to 0.1
3
Data Sheet PU10516EJ01V0DS
T86
5
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