C-BAND INTERNALLY
MATCHED POWER GaAs MESFET
FEATURES
•
HIGH P
OUT
18W (42.5 dBm) Typ P
1dB
for NEZ6472-15D/15DL
9W (39.5 dBm) Typ P
1dB
for NEZ6472-8D/8DL
4.5W (36.5 dbm) Typ P
1dB
for NEZ6472-4D/4DL
HIGH EFFICIENCY
35%
η
ADD
for 4.5W Device
33%
η
ADD
for 9W Device
32%
η
ADD
for 18W Device
LOW IMD
-45 dBc IM
3
@ 31.5 dBm P
OUT
(SCL) -15DL
-45 dBc IM
3
@ 29 dBm P
OUT
(SCL) -8DL
-45 dBc IM
3
@ 26 dBm P
OUT
(SCL) -4DL
SiO
2
PASSIVATED CHIP
For Power/Gain Stability Under RF Overdrive
CLASS A OPERATION
INTERNALLY MATCHED (IN/OUT)
SUPERIOR GAIN FLATNESS
INDUSTRY COMPATIBLE HERMETIC PACKAGES
= 25°C)
NEZ6472-4D
NEZ6472-4DL
T-61
NEZ6472-8D
NEZ6472-8DL
T-61
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
1dB
PARAMETERS AND CONDITIONS
Output Power at P
IdB1
I
DSQ
= 0.8A, (RF Off)
I
DSQ
= 1.6A
I
DSQ
= 4.0A
45
-15D
-8D
-4D
40
NEZ6472-15D
NEZ6472-15DL
NEZ6472-8D
NEZ6472-8DL
NEZ6472-4D
NEZ6472-4DL
OUTPUT POWER AND EFFICIENCY
vs. INPUT POWER
100%
80%
P
OUT
•
35
60%
Efficiency
30
•
40%
25
20%
•
•
•
•
•
20
12
17
22
27
32
37
0%
Input Power, P
IN
(dBm)
ELECTRICAL CHARACTERISTICS
(T
C
NEZ6472-15D
NEZ6472-15DL
T-65
TYP MAX TEST CONDITIONS
V
DS
= 10V
f = 6.4
to 7.2 GHz
6.0
Zs = Z
L
50 ohms
V
DS
= I0V
f
1
= 7.19 GHz
f
2
= 7.20 GHZ
2 Equal Tones
UNITS MIN TYP MAX MIN
dBm 35.5 36.5
dBm
dBm
1.5
7.5
-42
TYP MAX MIN
38.5
39.5
41.5
33
2.2
8.5
3.0
7.0
42.5
32
4.4
8.0
η
ADD
I
DS
G
L
IM
3
-XDL
Option
Only
I
DSS
V
P
BV
DGO
g
m
R
TH(CH-C)
∆T
(CH-C)
Power Added Efficiency @ P
1dB
%
35
Drain Current at P
1dB
A
1.1
Linear Gain
dB
8.0 9.0
3rd Order Intermodulation Distortion
3
at
Pout = 26 dBm SCL
2
, I
DSQ
= 0.5 x I
DSS
dBc
-45
2
, I
DSQ
= 0.5 x I
DSS
Pout = 29 dBm SCL
dBc
Pout = 31.5 dBm SCL
2
, I
DSQ
= 0.5 x I
DSS
dBc
Saturated Drain Current, V
GS
= 0 V
A
1.0 2.3
Pinch Off Voltage
I
DS
= 15 mA
V
-3.5 -2.0
I
DS
= 30 mA
V
I
DS
= 60 mA
V
Drain - Gate Breakdown Voltage
I
DG
= 15 mA
V
20
22
I
DG
= 30 mA
V
I
DG
= 60 mA
V
Transconductance
I
DS
= I A
mS
1300
I
DS
= 2 A
mS
I
DS
= 4 A
mS
Thermal Resistance (Channel to Case)
°C/W
5.0
Channel Temperature Rise
4
°C
-45
3.5
-0.5
-3.5
-2.0
2.0
4.5
-42
7.0
4.0
-45
9.2
-42
14.0
V
DS
= 2.5 V
-0.5
-3.5
-2.2
-0.5
20
22
20
22
2600
6.0
48
2.5
3.0
48
5200
1.3
1.5
60
Notes:
1. P
1dB
: Ouptut Power at the 1dB Gain Compression Point.
2. SCL: Single Carrier Level.
3. Maximum Spec Applies to -XDL Option Only.
4.
∆T
(CH-C)
= T
CH
- T
C
= 10 V x I
DSQ
x R
TH (CH-C) MAX
.
California Eastern Laboratories
Power Added Efficiency,
η
ADD
(%)
Output Power, P
OUT
(dBm)
NEZ6472-4D/4DL,-8D/8DL,-15D/15DL
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25
°C)
SYMBOLS
V
DS
V
GS
V
GD
I
DS
I
GRF
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
UNITS
NEZ6472-4D/4DL
V
V
V
A
mA
°C
°C
15
-12
-18
I
DSS
25
175
-65 to +175
RATINGS
NEZ6472-8D/8DL
15
-12
-18
I
DSS
50
175
-65 to +175
50
NEZ6472-15D/15DL
15
-12
-18
I
DSS
100
175
-65 to +175
100
P
T
Total Power Dissipation
W
25
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
MAXIMUM OPERATING LIMITS
PART NUMBER
NEZ6472-4D/4DL
NEZ6472-8D/8DL
NEZ6472-15D/15DL
Rg MAX
1
Ω
200
100
50
I
GRF
MAX
mA
5
10
20
V
DS
MAX
V
10
10
10
Note:
1. Rg MAX is the maximum recommended series resistance
between the Gate Supply and the FET Gate.
TYPICAL PERFORMANCE CURVES
(T
C
= 25°C)
INTERMODULATION DISTORTION
vs. OUTPUT POWER
-20
44
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER
(-15D/DL)
6.0
P
OUT
41
5.0
4.0
I
DS
3.0
2.0
1.0
I
GS
0.0
1.0
2.0
14
17
20
23
26
29
32
35
38
Intermodulation Distortion, IMD (dBc)
Output Power, P
OUT
(dBm)
-30
-15DL
-8DL
-4DL
38
35
32
29
26
23
-40
-50
IM
3
-60
-70
IM
5
-80
22
26
30
34
38
42
20
Total Output Power, P
OUT
(dBm)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-8D/DL)
41
4.0
Input Power, P
IN
(dBm)
OUTPUT POWER, DRAIN AND GATE
CURRENTS vs. INPUT POWER (-4D/DL)
39
2.0
P
OUT
Drain/Gate Currents, I
DS
(A) I
GS
(mA)
Output Power, P
OUT
(dBm)
Output Power, P
OUT
(dBm)
36
P
OUT
3.0
36
35
I
DS
2.0
33
I
DS
1.0
32
1.0
30
29
I
GS
26
23
16
19
22
25
28
31
34
0.0
27
I
GS
24
0.0
-1.0
-2.0
21
14
17
20
23
26
29
32
1.0
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
Drain/Gate Currents, I
DS
(A) I
GS
(mA)
Drain/Gate Currents, I
DS
(A) I
GS
(mA)
NEZ6472-4D/4DL, -8D/8DL, -15D/15DL
TYPICAL PERFORMANCE CURVES
(T
C
= 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
110
100
Infinite Heat sink
90
80
-15D/-15DL
70
60
50
-8D/-8DL
40
30
-4D/-4DL
20
10
0
0
25
50
75
100
125
150
175
200
Power Dissipation, P
T
(W)
Case Temperature, T
C
(°C)
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE T-61
GATE SIDE
INDICATOR
DEPRESSION
2.4
12.9
±
0.2
R 1.6, 2 PLACES
3.2
6.45
±
0.05
2.5 MIN BOTH
LEADS
PACKAGE OUTLINE T-65
0.5±0.1
C 1.0, 4 PLACES SOURCE
GATE
R 1.2, 4 PLACES
2.4
8.0±0.1
5.6
17.4±0.2
2.5 MIN BOTH
LEADS
0.5
±
0.1
C 1.5, 4 PLACES
SOURCE
GATE
DRAIN
17.0
±
0.2
21.0
±
0.3
DRAIN
20.4±0.2
24.0±0.3
+0.1
0.1 -0.05
10.7
5.0 MAX
+0.1
0.1 -0.05
16.0
5.0 MAX
2.6±0.2 1.6
12.0
0.2 MAX
2.4±0.2 1.6
16.0
0.2 MAX
NEZ6472-4D/DL, -8D/DL, -15D/DL
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS
(T
C
= 25°C)
S
21
0.1 GHz
j50
j25
j100
90˚
120˚
60˚
150˚
j10
S
22
7.4 GHz
10
25
50
100
0
S
12
0.1 GHz
30˚
0
180˚
S
22
0.1 GHz
-j10
S
11
7.4 GHz
S
12
7.4 GHz
S
21
7.4 GHz
4
6
8
.6
.8
.10
0˚
-150˚
-j25
-30˚
S
11
0.1 GHz
-j50
-j100
-120˚
S
21
10
-90˚
-60˚
NEZ6472-4D/4DL
V
DS
= 10.0 V, I
DS
= 800 mA
FREQUENCY
GHz
0.1
0.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5.8
6.0
6.2
6.4
6.5
6.6
6.7
6.8
6.9
7.0
7.1
7.2
7.4
S
11
MAG
0.942
0.958
0.963
0.968
0.960
0.955
0.952
0.949
0.939
0.930
0.872
0.749
0.590
0.553
0.528
0.562
0.600
0.613
0.617
0.604
0.580
0.552
0.506
0.470
0.404
0.271
ANG
-103.4
-141.0
-177.8
155.5
133.3
113.5
92.5
71.5
47.7
23.9
-3.2
-35.9
-87.0
-135.4
-167.7
158.3
126.3
112.6
98.8
86.3
73.1
60.7
49.0
33.6
19.3
-17.1
MAG
13.187
7.998
3.473
1.846
1.294
1.050
0.982
0.914
0.981
1.047
1.262
1.547
2.027
2.389
2.631
2.849
3.002
3.061
3.134
3.189
3.195
3.245
3.167
3.236
3.152
3.068
S
21
ANG
121.3
100.9
71.0
37.5
6.3
-23.5
-52.9
-82.4
-115.0
-147.7
174.5
134.8
88.7
55.7
33.8
9.7
-16.1
-28.6
-41.7
-54.2
-67.9
-81.2
-94.1
-108.6
-121.6
-147.9
MAG
0.008
0.008
0.009
0.010
0.010
0.011
0.012
0.013
0.016
0.020
0.019
0.024
0.042
0.056
0.065
0.072
0.080
0.083
0.087
0.092
0.095
0.101
0.103
0.107
0.106
0.110
S
12
ANG
62.3
16.7
-0.6
-12.2
-25.4
-41.3
-63.4
-85.6
-117.0
-148.4
161.2
127.1
71.5
33.2
7.7
-20.1
-46.7
-59.1
-71.9
-83.9
-97.7
-110.3
-123.7
-138.5
-150.7
-175.1
MAG
0.625
0.677
0.691
0.701
0.709
0.726
0.737
0.748
0.752
0.756
0.759
0.728
0.645
0.548
0.484
0.395
0.305
0.265
0.234
0.218
0.204
0.211
0.224
0.240
0.244
0.248
S
22
ANG
179.6
177.2
166.6
151.7
134.5
118.8
101.7
84.7
66.6
48.6
28.0
5.8
-21.3
-44.2
-59.5
-78.7
-102.6
-117.9
-135.4
-154.9
-178.2
159.7
139.5
117.8
102.2
76.6
S
21
(dB)
0.55
0.28
0.52
0.73
1.31
1.49
1.36
1.27
0.89
0.69
1.69
2.59
2.28
1.89
1.70
1.51
1.31
1.24
1.17
1.13
1.14
1.10
1.16
1.14
1.26
1.39
K
22.4
18.0
10.8
5.3
2.2
0.4
-0.1
-0.7
-0.1
0.3
2.0
3.7
6.1
7.5
8.4
9.0
9.5
9.7
9.9
10.0
10.0
10.2
10.0
10.2
9.9
9.7
MAG
1
(dB)
32.1
29.9
25.8
22.6
17.7
15.6
15.5
15.3
17.7
17.1
13.3
11.1
10.4
10.8
11.1
11.7
12.3
12.6
13.0
13.1
12.9
13.0
12.3
12.4
11.6
10.7
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NEZ6472-4D/DL, -8D/DL, -15D/DL
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS
(T
C
= 25°C)
S
21
0.1 GHz
j50
j25
j100
90˚
120˚
S
12
0.1 GHz
S
12
7.4 GHz
S
21
7.4 GHz
60˚
150˚
j10
30˚
S
22
7.4 GHz
10
50
0
S
22
0.1 GHz
S
11
7.4 GHz
0
180˚
.1 .15
.2
.25
0˚
-j10
S
11
0.1 GHz
-j25
-j50
-j100
-150˚
3
4
-30˚
-120˚
S
21
5
-90˚
-60˚
NEZ6472-8D/8DL
V
DS
= 10.0 V, I
DS
= 1600 mA
FREQUENCY
(GHz)
0.1
0.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5.8
6.0
6.2
6.4
6.5
6.6
6.7
6.8
6.9
7.0
7.1
7.2
7.4
S
11
MAG
0.971
0.975
0.981
0.985
0.978
0.973
0.962
0.972
0.984
0.973
0.955
0.862
0.720
0.606
0.532
0.477
0.464
0.472
0.486
0.491
0.488
0.475
0.442
0.420
0.364
0.247
ANG
-136.9
-161.5
174.4
153.4
133.4
115.9
98.3
79.4
59.3
38.6
16.7
-8.2
-42.1
-72.7
-101.1
-137.8
177.9
156.9
136.3
118.0
99.4
82.3
67.0
49.1
33.2
-5.5
MAG
8.298
4.465
1.859
0.991
0.703
0.579
0.520
0.516
0.547
0.615
0.764
0.965
1.344
1.700
2.010
2.353
2.702
2.837
2.988
3.102
3.150
3.213
3.111
3.135
3.012
2.834
S
21
ANG
106.7
92.4
69.8
41.4
13.5
-13.1
-39.2
-66.4
-95.1
-126.0
-160.9
162.4
120.6
90.8
68.4
43.6
15.3
0.8
-14.6
-29.8
-46.3
-62.6
-78.6
-95.5
-110.8
-141.5
MAG
0.004
0.005
0.005
0.007
0.008
0.010
0.011
0.012
0.014
0.019
0.015
0.020
0.030
0.037
0.047
0.057
0.070
0.076
0.082
0.088
0.093
0.100
0.103
0.105
0.104
0.106
S
12
ANG
20.4
18.2
9.8
8.5
0.8
-13.9
-33.9
-50.9
-72.0
-104.8
-144.0
-175.3
120.1
80.1
54.0
22.0
-10.4
-25.8
-43.1
-58.6
-76.0
-91.9
-108.9
-126.6
-141.4
-171.1
MAG
0.801
0.830
0.834
0.835
0.833
0.838
0.833
0.837
0.837
0.828
0.846
0.819
0.754
0.692
0.631
0.540
0.421
0.352
0.287
0.236
0.196
0.195
0.223
0.262
0.280
0.294
S
22
ANG
177.0
175.1
165.6
151.2
136.2
121.7
106.5
90.6
74.6
58.0
39.9
20.8
-0.4
-17.2
-31.4
-48.7
-71.0
-85.5
-103.1
-125.7
-156.8
168.9
139.5
112.6
94.7
70.1
K
0.284
0.454
0.757
0.870
1.394
1.449
1.888
1.096
0.200
0.044
0.289
1.564
2.473
2.720
2.418
2.186
1.842
1.705
1.555
1.430
1.356
1.255
1.272
1.229
1.337
1.509
S
21
(dB)
18.3
12.9
5.3
-0.0
-3.0
-4.7
-5.6
-5.7
-5.2
-4.2
-2.3
-0.3
2.5
4.6
6.0
7.4
8.6
9.0
9.5
9.8
9.9
10.1
9.8
9.9
9.5
9.0
MAG
1
(dB)
33.1
29.5
25.7
21.5
15.7
13.6
11.3
14.4
15.9
15.1
17.0
12.4
9.7
9.4
9.6
9.9
10.5
10.8
11.2
11.5
11.7
12.0
11.6
11.8
11.1
10.0
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
•
Headquarters
•
4590 Patrick Henry Drive
•
Santa Clara, CA 95054-1817
•
(408) 988-3500
•
Telex 34-6393
•
FAX (408) 988-0279
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