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NDP6020P / NDB6020P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
-24 A, -20 V. R
DS(ON)
= 0.05
Ω
@ V
GS
= -4.5 V.
R
DS(ON)
= 0.07
Ω
@ V
GS
= -2.7 V.
R
DS(ON)
= 0.075
Ω
@ V
GS
= -2.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through
hole and surface mount applications.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP6020P
-20
±8
-24
-70
60
0.4
-65 to 175
NDB6020P
Units
V
V
A
Gate-Source Voltage - Continuous
Drain Current
- Continuous
- Pulsed
P
D
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
W/°C
°C
T
J
,T
STG
Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
NDP6020P Rev.C1
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
R
DS(ON)
R
DS(ON)
I
D(on)
g
FS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -16 V, V
GS
= 0 V
T
J
= 55°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -12 A
T
J
= 125°C
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
V
GS
= -2.7 V, I
D
= -10 A
V
GS
= -2.5 V, I
D
= -10 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -12 A
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
-24
14
-0.4
-0.3
-0.7
-0.56
0.041
0.06
0.059
0.064
-20
-1
-10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
-1
-0.7
0.05
0.08
0.07
0.075
A
S
V
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1590
725
215
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -10 V,
I
D
= -24 A, V
GS
= -5 V
V
DD
= -20 V, I
D
= -3 A,
V
GS
= -5 V, R
GEN
= 6
Ω
15
27
120
70
25
5
10
30
60
250
150
35
nS
nS
nS
nS
nC
nC
nC
NDP6020P Rev.C1
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
I
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
S
= -12 A
(Note 1)
V
GS
= 0 V, I
F
= -24 A,
dI
F
/dt = 100 A/µs
-1.1
60
-1.7
-24
-80
-1.3
A
A
V
ns
A
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.5
62.5
°C/W
°C/W
NDP6020P Rev.C1
Typical Electrical Characteristics
-50
V
GS
= -5.0V
, DRAIN-SOURCE CURRENT (A)
-40
1.8
-4.5
-4.0
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -2.5 V
-3.5
1.6
-2.7
-3.0
-30
-3.0
-20
1.4
-3.5
-4.0
-2.7
-2.5
1.2
-4.5
-5.0
-10
I
D
-2.0
1
0
0
-1
V
DS
-2
-3
-4
, DRAIN-SOURCE VOLTAGE (V)
-5
0.8
0
-10
-20
-30
I
D
, DRAIN CURRENT (A)
-40
-50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.8
2
I
D
= -12A
V
G S
=-4.5V
DRAIN-SOURCE ON-RESISTANCE
1.6
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -4.5V
TJ = 125°C
1.5
R
DS(ON)
, NORMALIZED
1.4
1.2
R
DS(on)
, NORMALIZED
25°C
1
1
0.8
-55°C
0.6
-50
0.5
-25
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
J
150
175
0
-10
I
D
-20
-30
-40
-50
, DRAIN CURRENT (A)
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature
.
-10
GATE-SOURCE THRESHOLD VOLTAGE
1.2
V
DS
= -5V
-8
I , DRAIN CURRENT (A)
T = -55°C
J
25°C
125°C
V
GS(th)
, NORMALIZED
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
V
DS
= V
GS
I
D
= -250µA
-6
-4
D
-2
0
-0.5
-1
-1.5
-2
V
, GATE TO SOURCE VOLTAGE (V)
GS
-2.5
-25
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
J
150
175
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation with
Temperature
.
NDP6020P Rev.C1
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