2N5152, 2N5152L,2N5154, 2N5154L
NPN Power Silicon Transistor
Rev. V3
Features
•
Available in commercial, JAN, JANTX, JANTXV, JANS and
JANSR 100K rads (Si) per MIL-PRF-19500/544
•
TO-5 Package: 2N5151L, 2N5153L
•
TO-39 Package: 2N5151, 2N5153
•
Ideal for High Current Switching Applications
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Collector
-
Emitter Breakdown Voltage
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
Collector
-
Emitter Cutoff Current
Test Conditions
I
C
= 100 mA dc, I
B
= 0
V
EB
= 4.0 Vdc, I
C
= 0
V
EB
= 5.5 Vdc, I
C
= 0
V
CE
= 60 V dc, V
BE
= 0
V
CE
= 100 V dc, V
BE
= 0
V
CE
= 40 Vdc, I
B
= 0
I
C
= 50 mA dc, V
CE
= 5.0 Vdc
2N5152, 2N5152L
2N5154, 2N5154L
I
C
= 2.5 A dc, V
CE
= 5.0 Vdc
2N5152, 2N5152L
2N5154, 2N5154L
I
C
= 5.0 A dc, V
CE
= 5.0 Vdc
2N5152, 2N5152L
2N5154, 2N5154L
I
C
= 2.5 Adc, I
B
= 250 mAdc
I
C
= 5.0 Adc, I
B
= 500 mAdc
I
C
= 2.5 A dc, V
CE
= 5.0 Vdc
I
C
= 2.5 A dc, I
B
= 250 mA dc
I
C
= 5.0 A dc, I
B
= 500 mA dc
T
C
= +150
o
C
V
CE
= 60 V dc, V
BE
=
-2
V dc
T
C
=
-55
o
C
V
CE
= 5 V dc, I
C
= 2.5 A dc
2N5152, 2N5152L
2N5154, 2N5154L
Symbol Units
V
(BR)CEO
V dc
I
EBO1
I
EBO2
I
CES1
I
CES2
I
CEO
µA dc
mA dc
µA dc
mA dc
µA dc
Min.
80
—
—
—
20
50
-
30
70
20
40
0.75
1.50
1.45
1.45
2.20
25
90
200
Max.
—
1.0
1.0
1.0
1.0
50
h
FE1
h
FE2
h
FE3
Forward Current Transfer Ratio
Collector
-
Emitter Saturation Voltage
Base
-
Emitter Voltage (nonsaturated)
Emitter
-
Base Saturation Voltage
Collector-Emitter Cutoff Current
V
CE(SAT)1
V dc
V
CE(SAT)2
V
BE
V dc
—
—
—
—
V
BE(SAT)1
V dc
V
BE(SAT)2
I
CEX
µA dc
Forward-Current Transfer Ratio
h
FE4
15
25
(Continued next page)
1
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Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5152, 2N5152L,2N5154, 2N5154L
NPN Power Silicon Transistor
Rev. V3
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
I
C
= 500 mA dc, V
CE
= 5.0 Vdc, f = 10 MHz
2N5152, 2N5152L
2N5154, 2N5154L
I
C
= 100 mA dc, V
CE
= 5.0 Vdc, f = 1 kHz
2N5152, 2N5152L
2N5154, 2N5154L
V
CB
= 10 Vdc, I
E
= 0, f = 1 MHz
Test Conditions
Test Conditions
Symbol Units
Min.
Max.
| h
fe
|
-
6
7
—
Common-Emitter, Small-Signal, Short-Circuit,
Forward-Current Transfer Ratio
h
FE
-
20
50
—
Open-Circuit Output Capacitance
Parameter
Switching Characteristics
Turn-On Time
Storage Time
Fall Time
Turn-Off Time
Safe Operating Area
C
obo
pF
—
Min.
250
Max.
Symbol Units
t
on
I
C
= 5 A dc; I
B1
= 500 mA dc, R
L
= 6
Ω,
I
B2
=
-500
mA dc, V
BE(off)
= 3.7 Vdc
t
s
t
f
t
off
µs
µs
µs
µs
—
—
—
—
0.5
1.4
0.5
1.5
DC Tests:
Test 1:
Test 2:
Test 3:
(Unclamped inductive)
T
C
= +25°C, I Cycle, t
p
= 1 s
V
CE
= 5 V dc, I
C
= 2 A dc
V
CE
= 32 V dc, I
C
= 310 mA dc
V
CE
= 80 V dc, I
C
= 12.5 mA dc
T
C
= +25
o
C, R
BB1
= 10Ω
R
BB2
= 100Ω, L = 0.3 mH
RL = 0.1Ω, V
CC
= 10 V dc
V
BB1
= 10 V dc, V
BB2
= 4 V dc
I
CM
= 10 A dc (see figure 15 of MIL-PRF-19500/544)
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5152, 2N5152L,2N5154, 2N5154L
NPN Power Silicon Transistor
Rev. V3
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise specified)
Ratings
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C
@ T
C
= 25°C
Reverse Pulse Energy
(2)
Operating & Storage Temperature Range
T
J
, T
stg
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
80 V dc
100 V dc
5.5 V dc
2 A dc
10 A dc
(1)
1W
10 W
15 mJ
-65°C
to +200°C
P
T
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
(4)
Symbol
R
θJC
R
θJA
Max. Value
10°C/W
175°C/W
Thermal Resistance, Junction to Ambient
(4)
1.
2.
3.
4.
This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1%.
This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit.
For thermal impedance curves see figures 10, 11, and 12 of MIL-PRF-19500/544
For thermal impedance curves, see figures 10, 11, and 12 of MIL-PRF-19500/544
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5152, 2N5152L,2N5154, 2N5154L
NPN Power Silicon Transistor
Rev. V3
Outline Drawings (TO-5, TO-39)
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5152, 2N5152L,2N5154, 2N5154L
NPN Power Silicon Transistor
Rev. V3
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5
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Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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